Datasheet > TIP112

TIP112

更新时间： 2024-11-03 22:42:15

品牌	Logo	应用领域
KEC		晶体晶体管开关 PC 局域网
页数	文件大小	规格书
2页	77K
描述
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

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替代型号

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TIP112 数据手册

SEMICONDUCTOR

TIP112

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

MONOLITHIC CONSTRUCTION WITH BUILT IN

BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.

FEATURES

ᴌHigh DC Current Gain.

DIM MILLIMETERS

: h_FE=1000(Min.), ᷤV_CE=4V, I_C=1A.

ᴌLow Collector-Emitter Saturation Voltage.

ᴌComplementary to TIP117.

10.30 MAX

15.30 MAX

0.80

Φ3.60+0.20

3.00

6.70 MAX

13.60+0.50

5.60 MAX

1.37 MAX

0.50

1.50 MAX

2.54

4.70 MAX

2.60

MAXIMUM RATING (Ta=25ᴱ)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

SYMBOL RATING

UNIT

1.50 MAX

1.50

V_CBO

V_CEO

V_EBO

I_C

100

1. BASE

9.50+0.20

100

8.00+0.20

2. COLLECTOR (HEAT SINK)

3. EMITTER

2.90 MAX

Collector Current

I_CP

Pulse

TO-220AB

I_B

Base Current

Ta=25ᴱ

Tc=25ᴱ

Collector Power

Dissipation

P_C

EQUIVALENT CIRCUIT

T_j

Junction Temperature

150

ᴱ

T_stg

Storage Temperature Range

-65ᴕ150

= 10kΩ

= 0.6kΩ

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL

TEST CONDITION

V_CE=50V, I_B=0

MIN.

TYP.

MAX.

UNIT

I_CEO

I_CBO

I_EBO

Collector Cut-off Current

V_CB=100V, I_E=0

V_EB=5V, I_C=0

Emitter Cut-off Current

DC Current Gain

1000

500

100

V_CE=4V, I_C=1A

V_CE=4V, I_C=2A

I_C=30mA, I_B=0

h_FE

V_CEO(SUS)

V_CE(sat)

V_BE(ON)

C_ob

Collector-Emitter Sustaining Voltage

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

I_C=2A, I_B=8mA

V_CE=4V, I_C=2A

V_CB=10V, I_E=0, f=0.1MHz

2.5

2.8

100

Collector Output Capacitance

1999. 11. 16

Revision No : 1

1/2

中文翻译

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TIP112 替代型号

型号	品牌	替代类型	描述	数据表
TIP32CG	ONSEMI	功能相似	Complementary Silicon Plastic Power Transistors

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