Datasheet > TIP112 TO-220AB

TIP112 TO-220AB

更新时间： 2024-11-05 17:01:07

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	244K
描述
100V,2A,General Purpose NPN Bipolar Transistor

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TIP112 TO-220AB 数据手册

Product Specification

NPN Epitaxial Silicon Darlington Transisor

TIP112

FEATURES



Monolithic Construction With Built in Base

-Emitter Shunt Resistors



Complementary to TIP117

High DC Current Gain:h_FE=1000@V_CE=4V,I_C=1A

Low Collector-Emitter Saturation Voltage

Industrial Use

TO-220AB

Ordering Information

Part Number

Package

Shipping

Marking Code

TIP112

TO-220AB

50 pcs / Tube

TIP112

MAXIMUM RATING operating temperature range applies unless otherwise specified

Value

100

Symbol

Parameter

Unit

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

V_CEO

V_EBO

Emitter-Base Voltage

Collector Current

I_C

Pulse

Base Crrent

I_B

Collector Dissipation

T_a=25℃

T_C=25℃

P_C

Junction and Storage Temperature

T_j,T_stg

-65 to +150

℃

STM0618A

www.gmesemi.com

12 3 4

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TIP112_12	UTC	获取价格	NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
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TIP11216A	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP112-6203	RENESAS	获取价格	2A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP112-6226	RENESAS	获取价格	2A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP112-6255	RENESAS	获取价格	2A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP112-6261	RENESAS	获取价格	2A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP112-6263	RENESAS	获取价格	Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
TIP112-6264	RENESAS	获取价格	2A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB