Datasheet > TIP112

TIP112

更新时间： 2024-11-05 14:52:59

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	719K
描述
TO-220-3L

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中文翻译

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数据手册

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TIP112 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-220-3L Plastic-Encapsulate Transistors

TIP112 DARLINGTON TRANSISTOR (NPN)

TO-220-3L

1. BASE

FEATURES

2. COLLECTOR

3. EMITTER

High DC Current Gain : h_FE=1000 @ V_CE=4V, I_C=1A(Min.)

Low Collector-Emitter Saturation Voltage

Industrial Use

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Equivalent Circuit

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TIP112

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MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

100

Collector-Emitter Voltage

100

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Operation Junction and Storage Temperature Range

P_C

℃

T_J,T_stg

-55 to +150

www.jscj-elec.com

Rev. - 2.1

12 3

中文翻译

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