是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | HTS代码: | 8541.29.00.95 |
风险等级: | 5.11 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 2 A | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 500 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 265 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 50 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | MATTE TIN |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TIP112 TO-220AB | BL Galaxy Electrical |
获取价格 |
100V,2A,General Purpose NPN Bipolar Transistor | |
TIP112_12 | UTC |
获取价格 |
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR | |
TIP112_15 | UTC |
获取价格 |
NPN EPITAXIAL SILICON TRANSISTOR | |
TIP11216 | MOTOROLA |
获取价格 |
2A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
TIP11216A | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
TIP112-6203 | RENESAS |
获取价格 |
2A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
TIP112-6226 | RENESAS |
获取价格 |
2A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
TIP112-6255 | RENESAS |
获取价格 |
2A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
TIP112-6261 | RENESAS |
获取价格 |
2A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
TIP112-6263 | RENESAS |
获取价格 |
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |