Datasheet > TIP112

TIP112

更新时间： 2024-11-04 04:28:27

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管达林顿晶体管开关 PC 局域网
页数	文件大小	规格书
3页	103K
描述
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

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中文翻译

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数据手册

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TIP112 数据手册

UTCTIP112

NPNEPITAXIAL PLANAR TRANSISTOR

NPN EPITAXIAL SILICON

DARLINGTON TRANSISTOR

FEATURES

* High DC Current Gain : h_FE= 1000 @V_CE=4V, Ic=1A (Min)

* Low Collector-Emitter Saturation Voltage

* Industrial Use

EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)

TO-220

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current (DC)

Collector Dissipation (Ta=25°C)

Collector Dissipation (Tc=25°C)

Junction Temperature

SYMBOL

V_CBO

V_CEO

V_EBO

Icp

I_B

T_STG

VALUE

UNIT

°C

100

150

-65 ~ +150

Storage Temperature

ELECTRICAL CHARACTERISTICS (Ta=25°C)

PARAMETER

Collector-Emitter Breakdown Voltage

Collector Cut-Off Current

Collector-Cut-Off Current

Emitter Cut-Off Current

SYMBOL

V_CEO(SUS)

I_CBO

TEST CONDITIONS

MIN. TYP. MAX. UNIT

I_C=30mA, I_B=0

V_CB=100V, I_E=0

V_CE=50V, I_B=0

100

I_CEO

I_EBO

h_FE

V_BE=5V, I_C=0

I_C=1A, V_CE=4V

I_C=2A, V_CE=4V

DC Current Gain

1000

500

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Output capacitance

V_CE(sat)

V_BE(on)

Cob

I_C=2A, I_B=8mA

V_CE=4V, I_C=2A

V_CB=10V, I_E=0, f=0.1MHz

2.5

2.8

100

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R203-022,A

12 3

中文翻译

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