Datasheet > TIP111

TIP111

更新时间： 2024-11-05 14:54:31

品牌	Logo	应用领域
鲁光 - LGE		晶体管达林顿晶体管
页数	文件大小	规格书
2页	735K
描述
达林顿晶体管

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中文翻译

获取价格

技术参数
数据手册

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TIP111 技术参数

极性：	NPN	Pc（W）：	2
Collector-emitter breakdown voltage：	80	IC(A)：	2
DC current gain - Min：	1000	DC current gain - Max：	/
Transition frequency：	/	Package：	TO-220AB
class：	Transistors

TIP111 数据手册

TIP111

TO-220 Darlington Transistor (NPN)

1. BASE

TO-220

2. COLLECTOR

3. EMITTER

Features

High DC Current Gain : h_FE=1000 @ V_CE=4V, I_C=1A(Min.)

Low Collector-Emitter Saturation Voltage

Industrial Use

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

Value

Units

Dimensions in inches and (millimeters)

P_C

℃

Junction Temperature

Storage Temperature

150

T_J

T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter sustaining voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=10mA,I_E=0

(sus)

V_CEO

I_C=30mA,I_B=0

V_(BR)EBOI_E=10mA,I_C=0

I_CEO

I_CBO

V_CE=40V,I_B=0

V_CB=80V,I_E=0

V_EB=5V,I_C=0

Collector cut-off current

Emitter cut-off current

I_EBO

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=4V,I_C=1A

V_CE=4V,I_C=2A

I_C=2A,I_B=8mA

V_CE=4V,I_C=2A

V_CB=10V,I_E=0,f=0.1MHz

1000

500

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

2.5

2.8

Collector output capacitance

C_ob

100

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Revision:20170701-P1

mail:lge@lgesemi.com

中文翻译

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与TIP111相关器件

型号	品牌	获取价格	描述	数据表
TIP11116	MOTOROLA	获取价格	2 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP11116A	MOTOROLA	获取价格	2A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP111-6203	RENESAS	获取价格	2A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP111-6226	RENESAS	获取价格	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
TIP111-6255	RENESAS	获取价格	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
TIP111-6258	RENESAS	获取价格	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
TIP111-6261	RENESAS	获取价格	2A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP111-6263	RENESAS	获取价格	2A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
TIP111-6264	RENESAS	获取价格	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
TIP111A	MOTOROLA	获取价格	2 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB