5秒后页面跳转
TIM4450-16UL_09 PDF预览

TIM4450-16UL_09

更新时间: 2022-12-19 10:56:55
品牌 Logo 应用领域
东芝 - TOSHIBA 高功率电源
页数 文件大小 规格书
4页 142K
描述
HIGH POWER P1dB=42.5dBm at 4.4GHz to 5.0GHz

TIM4450-16UL_09 数据手册

 浏览型号TIM4450-16UL_09的Datasheet PDF文件第1页浏览型号TIM4450-16UL_09的Datasheet PDF文件第3页浏览型号TIM4450-16UL_09的Datasheet PDF文件第4页 
TIM4450-16UL  
ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )  
°
CHARACTERISTICS  
Drain-Source Voltage  
SYMBOL  
VDS  
VGS  
IDS  
UNIT  
V
RATING  
15  
-5  
Gate-Source Voltage  
Drain Current  
V
A
14  
Total Power Dissipation (Tc= 25 C)  
PT  
W
83.3  
°
C
Channel Temperature  
Storage  
Tch  
175  
°
C
°
Tstg  
-65 to +175  
PACKAGE OUTLINE (2-16G1B)  
Unit in mm  
c Gate  
d Source  
e Drain  
HANDLING PRECAUTIONS FOR PACKAGE MODEL  
Soldering iron should be grounded and the operating time should not exceed 10 seconds  
at 260°C.  
2

与TIM4450-16UL_09相关器件

型号 品牌 描述 获取价格 数据表
TIM4450-25UL TOSHIBA HIGH POWER P1dB=44.5dBm at 4.4GHz to 5.0GHz

获取价格

TIM4450-30L TOSHIBA TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-16G1B, 3 PIN, FET RF Power

获取价格

TIM4450-35SL TOSHIBA MICROWAVE POWER GaAs FET

获取价格

TIM4450-4 TOSHIBA TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-11D1B, 3 PIN, FET RF Power

获取价格

TIM4450-45SL TOSHIBA MICROWAVE POWER GaAs FET

获取价格

TIM4450-4UL TOSHIBA MICROWAVE POWER GaAs FET

获取价格