Datasheet > 晶体管 > 射频场效应晶体管> TIM4450-35SL

TIM4450-35SL

更新时间： 2024-02-12 17:09:37

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体射频场效应晶体管微波放大器局域网
页数	文件大小	规格书
4页	136K
描述
MICROWAVE POWER GaAs FET

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技术参数
数据手册

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TIM4450-35SL 技术参数

生命周期：	Active	包装说明：	HERMETIC SEALED, 2-16G1B, 2 PIN
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.57
Is Samacsys：	N	外壳连接：	SOURCE
配置：	SINGLE	最小漏源击穿电压：	15 V
最大漏极电流 (ID)：	20 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高频带：	C BAND	JESD-30 代码：	R-CDFM-F2
元件数量：	1	端子数量：	2
工作模式：	DEPLETION MODE	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	GALLIUM ARSENIDE
Base Number Matches：	1

TIM4450-35SL 数据手册

MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR

TIM4450-35SL

TECHNICAL DATA

FEATURES

LOW INTERMODULATION DISTORTION HIGH GAIN

IM3=-45 dBc at Po= 35.0dBm,

Single Carrier Level

HIGH POWER

G1dB=9.5dB at 4.4GHz to 5.0GHz

BROAD BAND INTERNALLY MATCHED FET

HERMETICALLY SEALED PACKAGE

P1dB=45.5dBm at 4.4GHz to 5.0GHz

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

CHARACTERISTICS

Output Power at 1dB Gain

Compression Point

Power Gain at 1dB Gain

Compression Point

Drain Current

SYMBOL

CONDITIONS

UNIT MIN. TYP. MAX.

P1dB

dBm 45.0 45.5

⎯

G1dB

8.5

9.5

⎯

VDS=10V

f = 4.4 to 5.0GHz

IDS1

ΔG

8.0

⎯

9.0

±0.8

⎯

Gain Flatness

Power Added Efficiency

3rd Order Intermodulation

Distortion

η_add

IM3

⎯

Two-Tone Test

Po=35.0dBm

dBc

-42

-45

⎯

(Single Carrier Level)

Drain Current

IDS2

8.0

9.0

⎯

(VDS X IDS + Pin – P1dB)

Channel Temperature Rise

ΔTch

100

⎯

X Rth(c-c)

Recommended Gate Resistance(Rg): 28 Ω (Max.)

ELECTRICAL CHARACTERISTICS ( Ta= 25 C )

CHARACTERISTICS

SYMBOL

CONDITIONS

VDS= 3V

IDS= 10.5A

VGSoff VDS= 3V

IDS= 140mA

VDS= 3V

VGS= 0V

UNIT MIN. TYP. MAX.

Transconductance

6500

-2.5

⎯

-1.0

⎯

-4.0

⎯

Pinch-off Voltage

Saturated Drain Current

IDSS

Gate-Source Breakdown

Voltage

VGSO IGS= -420μA

-5

⎯

C/W

Thermal Resistance

Rth(c-c) Channel to Case

1.0

1.3

⎯

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Rev. Jan. 2007

12 3 4

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