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TIM4450-60SL_06 PDF预览

TIM4450-60SL_06

更新时间： 2024-11-28 08:48:47
品牌 Logo 应用领域
东芝 - TOSHIBA 微波
页数 文件大小 规格书
4页 459K
描述
MICROWAVE POWER GaAs FET

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中文翻译

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TIM4450-60SL_06 数据手册

 浏览型号TIM4450-60SL_06的Datasheet PDF文件第2页浏览型号TIM4450-60SL_06的Datasheet PDF文件第3页浏览型号TIM4450-60SL_06的Datasheet PDF文件第4页 
MICROWAVE POWER GaAs FET  
MICROWAVE SEMICONDUCTOR  
TIM4450-60SL  
TECHNICAL DATA  
FEATURES  
n LOW INTERMODULATION DISTORTION n HIGH GAIN  
IM3=-45 dBc at Pout= 36.5dBm  
Single Carrier Level  
n HIGH POWER  
G1dB=9.5dB at 4.4GHz to 5.0GHz  
n BROAD BAND INTERNALLY MATCHED FET  
n HERMETICALLY SEALED PACKAGE  
P1dB=48.0dBm at 4.4GHz to 5.0GHz  
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )  
°
CHARACTERISTICS  
Output Power at 1dB Gain  
Compression Point  
Power Gain at 1dB Gain  
Compression Point  
Drain Current  
SYMBOL  
CONDITIONS  
UNIT MIN. TYP. MAX.  
P
1dB  
dBm 47.0 48.0  
¾
G1dB  
VDS= 10V  
f = 4.4 to 5.0GHz  
IDSset@9.5A  
dB  
8.5  
9.5  
¾
IDS1  
DG  
hadd  
A
dB  
%
13.2 15.0  
¾
¾
Gain Flatness  
¾
±0.8  
¾
Power Added Efficiency  
3rd Order Intermodulation  
Distortion  
42  
-45  
¾
IM  
Two-Tone Test  
Po=36.5dBm  
dBc  
-42  
3
¾
Drain Current  
IDS2  
(Single Carrier Level)  
(VDS X IDS –Pin + P1dB)  
X Rth(c-c)  
A
11.8  
100  
¾
¾
¾
¾
Channel Temperature Rise  
DTch  
C
°
Recommended Gate Resistance(Rg) : 28 W (Max.)  
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )  
°
CHARACTERISTICS  
SYMBOL  
CONDITIONS  
VDS= 3V  
IDS= 12.0A  
= 3V  
UNIT MIN. TYP. MAX.  
Transconductance  
gm  
S
¾
20  
-1.8  
38  
¾
Pinch-off Voltage  
V
GSoff  
V
DS  
V
-1.0  
-3.0  
I
= 200mA  
DS  
Saturated Drain Current  
IDSS  
VGSO  
Rth(c-c)  
VDS= 3V  
VGS= 0V  
A
¾
-5  
¾
¾
¾
Gate-Source Breakdown  
Voltage  
IGS= -1.0mA  
V
¾
C/W  
Thermal Resistance  
Channel to Case  
°
0.6  
0.8  
u The information contained herein is presented only as a guide for the applications of our products. No responsibility is  
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.  
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.  
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA  
before proceeding with design of equipment incorporating this product.  
Rev. Jun. 2006  
1234

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