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TICP106MLP PDF预览

TICP106MLP

更新时间: 2024-09-25 15:54:19
品牌 Logo 应用领域
伯恩斯 - BOURNS 栅极
页数 文件大小 规格书
2页 101K
描述
Silicon Controlled Rectifier, 2A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-92, PLASTIC, LP003, 3 PIN

TICP106MLP 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.67配置:SINGLE
最大直流栅极触发电流:0.2 mAJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
认证状态:Not Qualified最大均方根通态电流:2 A
断态重复峰值电压:600 V重复峰值反向电压:600 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM触发设备类型:SCR
Base Number Matches:1

TICP106MLP 数据手册

 浏览型号TICP106MLP的Datasheet PDF文件第2页 
TICP106 SERIES  
SILICON CONTROLLED RECTIFIERS  
LP PACKAGE  
(TOP VIEW)  
2 A Continuous On-State Current  
15 A Surge-Current  
G
1
2
3
Glass Passivated Wafer  
A
K
400 V to 600 V Off-State Voltage  
MDC1AA  
Max I of 200 µA  
GT  
LP PACKAGE  
WITH FORMED LEADS  
(TOP VIEW)  
Package Options  
PACKAGE  
PACKING  
PART # SUFFIX  
LP  
Bulk  
(None)  
R
G
A
K
LP with fomed leads  
Tape and Reel  
1
2
3
MDC1AB  
absolute maximum ratings over operating case temperure (unls otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
CP106D  
TICP106M  
TICP106D  
TICP106M  
400  
Repetitive peak off-state voltage (see Note 1)  
VDRM  
V
600  
400  
Repetitive peak reverse voltage  
VRRM  
V
600  
Continuous on-state current at (or belo25°case tempeture (see Note 2)  
Surge on-state current (see Note 3)  
IT(RMS)  
ITSM  
IGM  
2
15  
A
A
Peak positive gate current (pe w3µs)  
Average gate power dissipatisee te 4
Operating case temperature ran
0.2  
A
PG(AV)  
TC  
0.3  
W
°C  
°C  
°C  
-40 to +110  
-40 to +125  
230  
Storage temperature range  
Tstg  
Lead temperature 3.2 mm from case for 10 seconds  
TL  
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 k.  
2. These values apply for continuous dc operation with resistive load. Above 25°C derate linearly to zero at 110°C.  
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge  
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.  
4. This value applies for a maximum averaging time of 20 ms.  
MARCH 1988 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

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