Datasheet > TICP107

TICP107

更新时间： 2024-09-24 22:42:15

品牌	Logo	应用领域
POINN		可控硅整流器
页数	文件大小	规格书
6页	118K
描述
SILICON CONTROLLED RECTIFIERS

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TICP107 数据手册

TICP107 SERIES

SILICON CONTROLLED RECTIFIERS

JANUARY 1999 - REVISED JUNE 2000

1 A Continuous On-State Current

15 A Surge-Current

LP PACKAGE

(TOP VIEW)

Glass Passivated Wafer

400 V to 600 V Off-State Voltage

MDC1AA

50 µA min, 200 µA max

LP PACKAGE

WITH FORMED LEADS

(TOP VIEW)

di/dt 100A/µs

Package Options

PACKAGE

PACKING

Bulk

PART # SUFFIX

(None)

LP with fomed leads

Tape and Reel

MDC1AB

absolute maximum ratings over operating junction temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

TICP107D

TICP107M

TICP107D

TICP107M

400

Repetitive peak off-state voltage (see Note 1)

V_DRM

600

400

Repetitive peak reverse voltage

V_RRM

600

Continuous on-state current at (or below) 25°C ambient temperature (see Note 2)

Surge on-state current at (or below) 25°C ambient temperature (see Note 3)

Critical rate of rise of on-state current at 110°C (see Note 4)

Peak positive gate current (pulse width £ 300 ms)

Junction temperature range

I_T(RMS)

I_TSM

di/dt

I_GM

100

A/µs

0.2

T_J

-40 to +110

-40 to +125

230

°C

Storage temperature range

T_stg

T_L

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. These values apply when the gate-cathode resistance R_GK= 1 kW.

2. These values apply for continuous dc operation with resistive load.

3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage

and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

4. Rate of rise of on-state current after triggering with I_G= 10mA, di_G/dt = 1A/µs.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

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与TICP107相关器件

型号	品牌	获取价格	描述	数据表
TICP107D	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TICP107D	BOURNS	获取价格	Silicon Controlled Rectifier
TICP107DLP	BOURNS	获取价格	Silicon Controlled Rectifier, 1A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-92, PLAS
TICP107DLPR	BOURNS	获取价格	Silicon Controlled Rectifier, 1A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, PLASTIC, TO
TICP107DR	BOURNS	获取价格	Silicon Controlled Rectifier
TICP107M	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TICP107M	BOURNS	获取价格	Silicon Controlled Rectifier
TICP107MLP	BOURNS	获取价格	Silicon Controlled Rectifier, 1A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-92, PLAS
TICP107MLPR	BOURNS	获取价格	Silicon Controlled Rectifier, 1A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, PLASTIC, TO
TICP107MR	BOURNS	获取价格	Silicon Controlled Rectifier