Datasheet > TICP106

TICP106

更新时间： 2024-09-24 22:42:15

品牌	Logo	应用领域
POINN		可控硅整流器
页数	文件大小	规格书
6页	99K
描述
SILICON CONTROLLED RECTIFIERS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TICP106 数据手册

TICP106 SERIES

SILICON CONTROLLED RECTIFIERS

MARCH 1988 - REVISED MARCH 1997

●

2 A Continuous On-State Current

15 A Surge-Current

LP PACKAGE

(TOP VIEW)

Glass Passivated Wafer

400 V to 600 V Off-State Voltage

MDC1AA

Max I of 200 µA

LP PACKAGE

WITH FORMED LEADS

(TOP VIEW)

Package Options

PACKAGE

PACKING

PART # SUFFIX

Bulk

(None)

LP with fomed leads

Tape and Reel

MDC1AB

absolute maximum ratings over operating case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

TICP106D

TICP106M

TICP106D

TICP106M

400

Repetitive peak off-state voltage (see Note 1)

V_DRM

600

400

Repetitive peak reverse voltage

V_RRM

600

Continuous on-state current at (or below) 85°C case temperature (see Note 2)

Surge on-state current (see Note 3)

I_T(RMS)

I_TSM

I_GM

Peak positive gate current (pulse width £ 300 ms)

Average gate power dissipation (see Note 4)

Operating case temperature range

0.2

P_G(AV)

T_C

0.3

°C

-40 to +110

-40 to +125

230

Storage temperature range

T_stg

Lead temperature 3.2 mm from case for 10 seconds

T_L

NOTES: 1. These values apply when the gate-cathode resistance R_GK= 1 kW.

2. These values apply for continuous dc operation with resistive load. Above 85°C derate linearly to zero at 110°C.

3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage

and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

4. This value applies for a maximum averaging time of 20 ms.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

中文翻译

下载PDF

与TICP106相关器件

型号	品牌	获取价格	描述	数据表
TICP106D	POINN	获取价格	SILICON CONTROLLED RECTIFIERS
TICP106D	BOURNS	获取价格	Silicon Controlled Rectifier, 2A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-92, PLAS
TICP106D	TI	获取价格	TICP106D
TICP106DLPR	BOURNS	获取价格	Silicon Controlled Rectifier, 2A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, PLASTIC, TO
TICP106DR	BOURNS	获取价格	Silicon Controlled Rectifier, 2A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-92, PLAS
TICP106DR-S	BOURNS	获取价格	Silicon Controlled Rectifier, 2A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-92, PLAS
TICP106E	TI	获取价格	TICP106E
TICP106M	BOURNS	获取价格	Silicon Controlled Rectifier, 2A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-92, PLAS
TICP106M	TI	获取价格	TICP106M
TICP106M	POINN	获取价格	SILICON CONTROLLED RECTIFIERS