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TICP106D PDF预览

TICP106D

更新时间: 2024-09-25 20:33:35
品牌 Logo 应用领域
伯恩斯 - BOURNS 栅极
页数 文件大小 规格书
2页 85K
描述
Silicon Controlled Rectifier, 2A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-92, PLASTIC, LP003, 3 PIN

TICP106D 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
HTS代码:8541.30.00.80风险等级:5.73
配置:SINGLE最大直流栅极触发电流:0.2 mA
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:2 A
断态重复峰值电压:400 V重复峰值反向电压:400 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

TICP106D 数据手册

 浏览型号TICP106D的Datasheet PDF文件第2页 
TICP106 SERIES  
SILICON CONTROLLED RECTIFIERS  
LP PACKAGE  
(TOP VIEW)  
2 A Continuous On-State Current  
15 A Surge-Current  
G
1
2
3
Glass Passivated Wafer  
A
K
400 V to 600 V Off-State Voltage  
MDC1AA  
Max I of 200 µA  
GT  
LP PACKAGE  
WITH FORMED LEADS  
(TOP VIEW)  
Package Options  
PACKAGE  
PACKING  
PART # SUFFIX  
LP  
Bulk  
(None)  
R
G
A
K
LP with fomed leads  
Tape and Reel  
1
2
3
MDC1AB  
absolute maximum ratings over operating case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
TICP106D  
TICP106M  
TICP106D  
TICP106M  
400  
Repetitive peak off-state voltage (see Note 1)  
VDRM  
V
600  
400  
Repetitive peak reverse voltage  
VRRM  
V
600  
Continuous on-state current at (or below) 25°C case temperature (see Note 2)  
Surge on-state current (see Note 3)  
IT(RMS)  
ITSM  
IGM  
2
15  
A
A
Peak positive gate current (pulse width 300 µs)  
Average gate power dissipation (see Note 4)  
Operating case temperature range  
0.2  
A
PG(AV)  
TC  
0.3  
W
°C  
°C  
°C  
-40 to +110  
-40 to +125  
230  
Storage temperature range  
Tstg  
Lead temperature 3.2 mm from case for 10 seconds  
TL  
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 k.  
2. These values apply for continuous dc operation with resistive load. Above 25°C derate linearly to zero at 110°C.  
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge  
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.  
4. This value applies for a maximum averaging time of 20 ms.  
MARCH 1988 - REVISED SEPTEMBER 2002  
Specifications are subject to change without notice.  
1

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