是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | 14 X 18 MM, 1.40 MM HEIGHT, BGA-169 |
针数: | 169 | Reach Compliance Code: | unknown |
ECCN代码: | 3A991.B.1.A | HTS代码: | 8542.32.00.51 |
风险等级: | 5.84 | JESD-30 代码: | R-PBGA-B169 |
JESD-609代码: | e1 | 长度: | 18 mm |
内存密度: | 274877906944 bit | 内存集成电路类型: | FLASH |
内存宽度: | 32 | 功能数量: | 1 |
端子数量: | 169 | 字数: | 8589934592 words |
字数代码: | 8000000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
组织: | 8GX32 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | LFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, LOW PROFILE, FINE PITCH | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 编程电压: | 3.3 V |
认证状态: | Not Qualified | 座面最大高度: | 1.4 mm |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子面层: | TIN SILVER COPPER | 端子形式: | BALL |
端子节距: | 0.5 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 类型: | NAND TYPE |
宽度: | 14 mm | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
THGBM3G4D1FBAIG | TOSHIBA | IC SPECIALTY MEMORY CIRCUIT, PBGA153, 11.50 X 13 MM, 1.20 MM HEIGHT, PLASTIC, TFBGA-153, M |
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THGBM4G6D2HBAIR | TOSHIBA | FLASH MEMORY DRIVE CONTROLLER |
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THGBM4T0DBGBAIJ | TOSHIBA | FLASH MEMORY DRIVE CONTROLLER |
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THGBM4T0DBOBAIJ | TOSHIBA | Semiconductor & Storage Products Company |
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THGBM5G5A1JBAIR | TOSHIBA | Semiconductor & Storage Products Company |
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THGBM5G5A1JBAIT | TOSHIBA | Flash Card |
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THGBM5G6A2JBAIR | TOSHIBA | Semiconductor & Storage Products Company |
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THGBM5G7A2JBAIM | TOSHIBA | Semiconductor & Storage Products Company |
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THGBM5G7B2JBAIM | TOSHIBA | Flash Card |
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THGBM5G8A4JBAIM | TOSHIBA | Semiconductor & Storage Products Company |
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