Datasheet > THGBM4T0DBGBAIJ

THGBM4T0DBGBAIJ

更新时间： 2024-02-19 11:05:40

品牌	Logo	应用领域
东芝 - TOSHIBA		外围集成电路
页数	文件大小	规格书
2页	131K
描述
FLASH MEMORY DRIVE CONTROLLER

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技术参数
数据手册

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THGBM4T0DBGBAIJ 技术参数

生命周期：	Active	包装说明：	BGA,
Reach Compliance Code：	unknown	风险等级：	5.77
JESD-30 代码：	R-PBGA-B169	端子数量：	169
最高工作温度：	85 °C	最低工作温度：	-25 °C
封装主体材料：	PLASTIC/EPOXY	封装代码：	BGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY
最大供电电压：	3.6 V	最小供电电压：	2.7 V
表面贴装：	YES	技术：	CMOS
温度等级：	OTHER	端子形式：	BALL
端子位置：	BOTTOM	uPs/uCs/外围集成电路类型：	SECONDARY STORAGE CONTROLLER, FLASH MEMORY DRIVE
Base Number Matches：	1

THGBM4T0DBGBAIJ 数据手册

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Card Interface : e･MMC

｜

MLC NAND

｜

TOSHIBA Semiconductor & Storage Products...

Card Interface : e･MMC

The interface of e･MMC™ is compliant with Version 4.41 of the JEDEC e･MMC™ standard for high-speed memory cards. Users

can easily use e･MMC™ in various products as an embedded MMC memory device (e･MMC™-compliant). Since e･MMC™

integrates a NAND flash memory and a controller chip in a single package, it can perform such controls as error corrections, wear

leveling and bad-block management internally. This frees users from the worry of control operations otherwise required for NAND

flash memory, making it easy to use.

Product list of e･MMC™

Power Supply

e-MMC Speed

Version (MHz)

Operating Temperature

Capacity

Part Number

Package

(℃)

Vcc(V)

VccQ(V)

2GB

THGBM4G4D1HBAIR

THGBM4G5D1HBAIR

THGBM4G6D2HBAIR

THGBM4G7D2GBAIE

THGBM4G8D4GBAIE

THGBM4G9D8GBAII

4GB

P-VFBGA153-1113-0.50-002

P-TFBGA169-1216-0.50A4

8GB

1.65 to 1.95,

2.7 to3.6

16GB

32GB

64GB

4.41

to 52 2.7 to 3.6

-25 to 85

P-TFBGA169-1418-0.50A4

P-FBGA169-1418-0.50-001

128GB THGBM4T0DBGBAIJ

http://www.semicon.toshiba.co.jp/eng/product/memory/selection/nand/mlc/emmc/index.htm... 4/1/2012

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