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THGBM1G7D8EBAI0 PDF预览

THGBM1G7D8EBAI0

更新时间: 2024-02-19 07:10:21
品牌 Logo 应用领域
东芝 - TOSHIBA 可编程只读存储器内存集成电路
页数 文件大小 规格书
19页 374K
描述
IC 8G X 16 FLASH 3.3V PROM, PBGA169, 12 X 18 MM, 1.40 MM HEIGHT, BGA-169, Programmable ROM

THGBM1G7D8EBAI0 技术参数

生命周期:Active零件包装代码:BGA
包装说明:LFBGA,针数:169
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.8
JESD-30 代码:R-PBGA-B169长度:18 mm
内存密度:137438953472 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
端子数量:169字数:8589934592 words
字数代码:8000000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-25 °C
组织:8GX16封装主体材料:PLASTIC/EPOXY
封装代码:LFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH并行/串行:PARALLEL
编程电压:3.3 V认证状态:Not Qualified
座面最大高度:1.4 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:BALL
端子节距:0.5 mm端子位置:BOTTOM
类型:MLC NAND TYPE宽度:12 mm
Base Number Matches:1

THGBM1G7D8EBAI0 数据手册

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THGBM1GxDxEBAIx  
TOSHIBA e-MMC Module  
1GB / 2GB / 4GB / 8GB / 16GB / 32GB  
INTRODUCTION  
THGBM1GxDxEBAIx Series  
THGBM1GxDxEBAIx series are 1-GB , 2-GB , 4-GB , 8-GB , 16-GB and 32-GB densities of e-MMC Module products  
housed in 153/169 ball BGA package. This unit is utilized advanced TOSHIBA NAND flash device(s) and controller chip  
assembled as Multi Chip Module. THGBM1GxDxEBAIx has an industry standard MMC protocol for easy use.  
FEATURES  
THGBM1GxDxEBAIx Series Interface  
THGBM1GxDxEBAIx has the-MMCA 4.3 interface with either 1-I/O, 4-I/O and 8-I/O mode support.  
Pin Connection  
11.5mm  
x
13.0mm  
x
1.2mm(max) Package  
Pin Number  
Name Pin Number Name  
A3  
A4  
A5  
B2  
B3  
B4  
B5  
B6  
C2  
C4  
C6  
E6  
E7  
F5  
G5  
DAT0  
DAT1  
DAT2  
DAT3  
DAT4  
DAT5  
DAT6  
DAT7  
VDDi  
VssQ  
VccQ  
Vcc  
H10  
J10  
K8  
K9  
M4  
M5  
M6  
N2  
N4  
N5  
P3  
P4  
P5  
P6  
Vss  
Vcc  
Vss  
Vcc  
VccQ  
CMD  
CLK  
VssQ  
VccQ  
VssQ  
VccQ  
VssQ  
VccQ  
VssQ  
Vss  
Vcc  
Vss  
1
2008-12-08  

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