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TG430

更新时间: 2024-09-15 08:49:31
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描述
500V N-Channel MOSFET

TG430 数据手册

  
TIGER ELECTRONIC CO., LTD.  
T G S  
Product specification  
TG430  
500V N-Channel MOSFET  
DESCRIPTION  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchilds proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switch mode power supply.  
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)  
Parameter  
Drain-Source Voltage  
Drain Current - Continuous  
Drain Current - Pulsed  
Gate-Source Voltage  
Value Unit  
l
VDSS  
500  
4.5  
18  
V
ID  
IDM  
VGSS  
PD  
A
A
30  
V
±
Power Dissipation  
85  
150  
W
oC  
Tj  
Max. Operating Junction Temperature  
Storage Temperature  
TO-252  
Tstg  
-55~150 oC  
O
ELECTRICAL CHARACTERISTICS  
( Ta = 25 C)  
Parameter  
Symbol  
Test Conditions  
Min.  
Typ. Max. Unit  
BVDSS  
IDSS  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
VGS = 0V, I =250 A  
500  
V
μ
D
VDS =500V, VGS =0V  
VGS =30V, VDS =0V  
VGS = -30V, VDS =0V  
1.0  
uA  
IGSSF  
IGSSR  
VGS(th)  
RDS(on)  
VSD  
Gate-Body Leakage Current, Forward  
Gate-Body Leakage Current, Reverse  
100  
-100  
5.0  
nA  
nA  
V
Gate Threshold Voltage  
VDS = VGS , I =250 A  
3.0  
μ
D
W
Static Drain-Source On-Resistance  
Drain-Source Diode Forward Voltage  
VGS = 10 V, ID = 2.25 A  
VGS = 0 V, IS = 4.5 A  
1.36  
1.8  
1.4  
V

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