TEPT5600B

更新时间： 2024-09-13 12:58:59

品牌	Logo	应用领域
威世 - VISHAY		晶体光电传感器晶体管光电晶体管
页数	文件大小	规格书
5页	120K
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中文翻译

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TEPT5600B 数据手册

TEPT5600

Vishay Semiconductors

Ambient Light Sensor

Description

TEPT5600 is a silicon NPN epitaxial planar photo

transistor in a standard T-1 3/4" plastic package.

Peak of responsivity is in the visible spectrum. Infra-

red spectrum is suppressed.

Features

• Responsivity adapted to human eye

94 8390

• Wide angle of half sensitivity ϕ = 20°

• Lead (Pb)-free component

• Component in accordance with RoHS

2002/95/EC and WEEE 2002/96/EC

Applications

• Replacement of cadmium sulfide (CdS) photo

resistors

• Ambient light sensor

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

V_CEO

Value

Unit

Collector emitter voltage

Emitter collector voltage

Collector current

V_ECO

I_C

1.5

°C

Total power dissipation

Junction temperature

T_amb≤ 55 °C

P_tot

T_j

100

Operating temperature range

Storage temperature range

Soldering temperature

T_amb

T_stg

T_sd

- 40 to + 85

- 40 to + 100

260

°C

2 mm distance to package, t ≤ 3 s

°C

Thermal resistance junction/

ambient

R_thJA

450

K/W

Basic Characteristics

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Collector emitter breakdown

voltage

I_C= 0.1 mA

V_CEO

Collector dark current

Collector-emitter capacitance

Photo current

V_CE= 5 V, E = 0

_CE= 0 V, f = 1 MHz, E = 0

I_CEO

C_CEO

I_PCE

µA

E_v= 20 lx, CIE illuminant A,

V_CE= 5 V

140

E_v= 100 lx, CIE illuminant A,

V_CE= 5 V

I_PCE

350

µA

Angle of half sensitivity

deg

Wavelength of peak sensitivity

λ_p

570

Range of spectral bandwidth

λ_0.1

360 to 970

Document Number 84768

Rev. 1.3, 28-Nov-06

www.vishay.com

12 3 4 5

中文翻译

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