TD351IDT

更新时间： 2024-02-10 03:30:18

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		驱动器双极性晶体管
页数	文件大小	规格书
12页	158K
描述
Advanced IGBT/MOSFET Driver

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技术参数
数据手册
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TD351IDT 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DIP	包装说明：	DIP, DIP8,.3
针数：	8	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8542.39.00.01
风险等级：	5.82	内置保护：	OVER CURRENT; UNDER VOLTAGE
接口集成电路类型：	HALF BRIDGE BASED PERIPHERAL DRIVER	JESD-30 代码：	R-PDIP-T8
JESD-609代码：	e3	功能数量：	1
端子数量：	8	最高工作温度：	125 °C
最低工作温度：	-40 °C	输出电流流向：	SOURCE AND SINK
封装主体材料：	PLASTIC/EPOXY	封装代码：	DIP
封装等效代码：	DIP8,.3	封装形状：	RECTANGULAR
封装形式：	IN-LINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	16 V	认证状态：	Not Qualified
子类别：	MOSFET Drivers	最大供电电压：	26 V
标称供电电压：	16 V	表面贴装：	NO
温度等级：	AUTOMOTIVE	端子面层：	Matte Tin (Sn) - annealed
端子形式：	THROUGH-HOLE	端子节距：	2.54 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
断开时间：	0.4 µs	接通时间：	2.2 µs
宽度：	7.62 mm

TD351IDT 数据手册

Functional Description

TD351

4 Functional Description

4.1 Input stage

4.4 Two level turn-off

TD351 input is compatible with optocouplers or

pulse transformers. The input is triggered by the

signal edge and allows the use of low-sized, low-

cost pulse transformer. Input is active low: output

is driven high when input is driven low. The IN

input is internally clamped at about 5V to 7V.

During turn-off, gate voltage can be reduced to a

programmable level in order to reduce the IGBT

current (in the event of over-current). This action

avoids both dangerous overvoltage across the

IGBT, and RBSOA problems, especially at short

circuit turn-off.

When using an open collector optocoupler, the

resistive pull-up resistor can be connected to

either VREF or VH. Recommended pull-up

resistor value with VH=16V are from 4.7k to 22k.

When driven by a pulse transformer, the input

positive and negative pulse widths at the Vton and

Vtoff threshold voltages must be larger than the

Turn-off (T ) delay is programmable through

external resistor R and capacitor C for accurate

timing. T is approximately given by:

T (µs) = 0.7. R (kOhms). C (nF)

Turn-off delay (T ) is also used to delay the input

signal to prevent distortion of input pulse width.

The Two level turn-off sequence can be disabled

by connecting LVOFF pin to VH and connecting

CD pin to VREF with a 4.7k resistor.

minimum pulse width t

(see fig. 4). This

onmin

feature acts as a filter against invalid input pulses

smaller than t

onmin

4.5 Minimum Input ON-time

4.2 Voltage reference

Input signals with ON-time smaller than T are

A voltage reference is used to create accurate

timing for the turn-on delay with external resistor

and capacitor. The same circuitry is also used for

the two-level turn-off delay.

ignored. ON-time signals larger than T +2.R .C

a del d

(R is the internal discharge switch resistance,

del

C is the external timing capacitor) are transmitted

to the output stage after the T delay with

A decoupling capacitor (10nF to 100nF) on VREF

pin is required to ensure good noise rejection.

minimum width distortion (∆T =T

-T ). For

wout win

ON-time input signals close to T (between T and

T +2.R .C ), the 2-level duration is slightly

reduced and the total output width can be smaller

than the input width (see fig. 5).

del

4.3 Active Miller clamp:

The TD351 offers an alternative solution to the

problem of the Miller current in IGBT switching

applications. Instead of driving the IGBT gate to a

negative voltage to increase the safety margin,

the TD351 uses a dedicated CLAMP pin to control

the Miller current. When the IGBT is off, a low

impedance path is established between IGBT

gate and emitter to carry the Miller current, and

the voltage spike on the IGBT gate is greatly

reduced.

During turn-off, the gate voltage is monitored and

the clamp output is activated when gate voltage

goes below 2V (relative to VL). The clamp voltage

is VL+4V max for a Miller current up to 500mA.

The clamp is disabled when the IN input is

triggered again.

4.6 Output stage

The output stage is able to sink/source 1.7A/1.3A

typical at 25°C and 1.0A/0.75A min. over the full

temperature range. This current capability is

specified near the usual IGBT Miller plateau.

4.7 Undervoltage protection

Undervoltage detection protects the application in

the event of a low VH supply voltage (during start-

up or a fault situation). During undervoltage, the

OUT pin is driven low (active pull-down for

VH>2V, passive pull-down for VH<2V.

UVH

UVL

Vccmin

The CLAMP function doesn’t affect the turn-off

characteristic, but only keeps the gate to the low

level throughout the off time. The main benefit is

that negative voltage can be avoided in many

cases, allowing a bootstrap technique for the high

side driver supply.

OUT

FAULT

5/12

1 2 3 456 7 8...12

中文翻译

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TD351IDT 替代型号

型号	品牌	替代类型	描述	数据表
TD351IN	STMICROELECTRONICS	完全替代	Advanced IGBT/MOSFET Driver
TD351ID	STMICROELECTRONICS	类似代替	Advanced IGBT/MOSFET Driver

与TD351IDT相关器件

型号	品牌	获取价格	描述	数据表
TD351IN	STMICROELECTRONICS	获取价格	Advanced IGBT/MOSFET Driver
TD352	STMICROELECTRONICS	获取价格	Advanced IGBT/MOSFET Driver
TD352_11	STMICROELECTRONICS	获取价格	Advanced IGBT/MOSFET driver
TD352ID	STMICROELECTRONICS	获取价格	Advanced IGBT/MOSFET Driver
TD352IDT	STMICROELECTRONICS	获取价格	Advanced IGBT/MOSFET Driver
TD352IN	STMICROELECTRONICS	获取价格	Advanced IGBT/MOSFET Driver
TD-36.000MBD-T	ETC	获取价格	OSC MEMS 36.000MHZ CMOS SMD
TD-36.000MBE-T	ETC	获取价格	OSC MEMS 36.000MHZ CMOS SMD
TD-36.000MCD-T	ETC	获取价格	OSC MEMS 36.000MHZ CMOS SMD
TD-36.000MCE-T	ETC	获取价格	OSC MEMS 36.000MHZ CMOS SMD

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