Datasheet > TC7WH125FU_09

TC7WH125FU_09

更新时间： 2024-11-16 12:22:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	204K
描述
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

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中文翻译

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数据手册

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TC7WH125FU_09 数据手册

TC7WH125FU/FK

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7WH125FU,TC7WH125FK

Dual Bus Buffer with 3-STATE Output

Features

TC7WH125FU

High speed t = 3.8 ns (typ.) at V

= 5.0 V, C =15pF

•

Low power dissipation: ICC=2μA (max.) at Ta = 25°C

High noise immunity : V

5.5-V tolerant inputs

= V

= 28%Vcc (min.)

NIH

NIL

Wide operating voltage range: V

= 2.0 to 5.5 V

Low Noise : V

= 0.8V(max.)

OLP

(SM8)

TC7WH125FK

Marking

SM8

US8

Product name

Lot. No

H 125

125

(US8)

Weight

SSOP8-P-0.65 : 0.02 g (typ.)

SSOP8-P-0.50A : 0.01 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Pin Assignment (top view)

Characteristics

Supply voltage

Symbol

Rating

Unit

−0.5 to 7.0

DC input voltage

DC output voltage

−0.5 to Vcc + 0.5

OUT

Input diode current

Output diode current

DC output current

−20

±20 (Note 1)

±25

±50

OUT

GND

DC V

/ GND current

300 (SM8)

200 (US8)

Power dissipation

Storage temperature

−65 to 150

°C

stg

Lead temperature (10s)

260

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Note 1: V

< GND,V >V

OUT CC

OUT

2009-09-24

12 3 4 5 6 7

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