Datasheet > TC7WH126FK_09

TC7WH126FK_09

更新时间： 2024-11-16 12:22:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	184K
描述
Bus Buffer with 3-STATE Output

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中文翻译

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数据手册

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TC7WH126FK_09 数据手册

TC7WH126FU/FK

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7WH126FU, TC7WH126FK

Bus Buffer with 3-STATE Output

TC7WH126FU

Features

•

High speed: t = 3.8 ns (typ.) at V

= 5.0 V, C = 15 pF

CC L

Low power dissipation: I

= 2 μA (max) at Ta = 25°C

High noise immunity: V

5.5 V tolerant inputs

= V

= 28% V

(min)

NIH

NIL

(SM8)

Balanced propagation delays : t

≈ t

pHL

pLH

Wide operating voltage range: V

= 2.0 to 5.5 V

TC7WH126FK

Low Noise : V

= 0.8V (max.)

OLP

Marking

(US8)

SM8

US8

Product name

Lot. No

Weight

SSOP8-P-0.65 : 0.02 g (typ.)

SSOP8-P-0.50A : 0.01 g (typ.)

H 126

126

Absolute Maximum Ratings (Ta = 25°C)

Pin Assignment (top view)

Characteristics

Supply voltage

Symbol

Rating

Unit

−0.5 to 7.0

DC input voltage

DC output voltage

Input diode current

Output diode current

DC output current

−0.5 to V

+ 0.5

OUT

−20

±20 (Note1)

±25

GND

OUT

DC V /ground current

±50

300(SM8)

Power dissipation

200(US8)

−65 to 150

260

Storage temperature

stg

°C

Lead temperature (10 s)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1:V_OUT<GND,V_OUT>V_CC

2009-09-21

12 3 4 5 6 7

中文翻译

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