Datasheet > TC7SZ125F_09

TC7SZ125F_09

更新时间： 2024-11-20 07:04:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	174K
描述
Bus Buffer 3-State Output

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中文翻译

获取价格

数据手册

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TC7SZ125F_09 数据手册

TC7SZ125F/FU

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SZ125F,TC7SZ125FU

Bus Buffer 3-State Output

TC7SZ125F

Features

•

High output current: ±24 mA (min) at V

= 3 V

Super high speed operation: t 2.6 ns (typ.) at V

= 5 V, 50 pF

Operation voltage range: V

5.5-V tolerant inputs

= 1.8 to 5.5 V

5.5-V power down protection output

Matches the performance of TC74LCX series when operated at

3.3 V V

(SMV)

TC7SZ125FU

Marking

Product name

J B

(USV)

Weight

SSOP5-P-0.95

SSOP5-P-0.65A

: 0.016 g (typ.)

: 0.006 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Supply voltage

Symbol

Rating

Unit

Pin Assignment (top view)

−0.5 to 6

DC input voltage

−0.5 to 6

G 1

−0.5 to 6 (Note 1)

DC output voltage

OUT

−0.5 to Vcc+0.5 (Note 2)

IN A

Input diode current

Output diode current

DC output current

−20

−20(Note 3)

±50

°C

GND

OUT Y

OUT

DC V /ground current

±50

Power dissipation

200

Storage temperature

Lead temperature (10s)

stg

−65 to 150

260

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Note 1: V_CC= 0V or high impedance condition.

Note 2: High or Low state. Do not exceed I_OUTof absolute maximum ratings.

Note 3: V_OUT< GND

2009-09-18

12 3 4 5 6 7

中文翻译

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