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TC7SZ125FE(TE85L) PDF预览

TC7SZ125FE(TE85L)

更新时间: 2024-11-20 21:17:43
品牌 Logo 应用领域
东芝 - TOSHIBA 驱动光电二极管逻辑集成电路
页数 文件大小 规格书
6页 138K
描述
IC,BUFFER/DRIVER,SINGLE,1-BIT,LCX/LVC-CMOS,FP,6PIN,PLASTIC

TC7SZ125FE(TE85L) 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:DFP, FL6,.047,20Reach Compliance Code:unknown
风险等级:5.87控制类型:ENABLE LOW
JESD-30 代码:R-PDFP-F6负载电容(CL):50 pF
逻辑集成电路类型:BUS DRIVER最大I(ol):0.024 A
位数:1功能数量:1
端子数量:6最高工作温度:85 °C
最低工作温度:-40 °C输出特性:3-STATE
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装代码:DFP封装等效代码:FL6,.047,20
封装形状:RECTANGULAR封装形式:FLATPACK
包装方法:TAPE AND REEL电源:3.3 V
Prop。Delay @ Nom-Sup:6 ns认证状态:Not Qualified
子类别:Bus Driver/Transceivers标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:FLAT
端子节距:0.5 mm端子位置:DUAL
Base Number Matches:1

TC7SZ125FE(TE85L) 数据手册

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TC7SZ125FE  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7SZ125FE  
Bus Buffer 3-State Output  
Features  
High output current  
: ±24mA (min) at V  
= 3V  
CC  
Super high speed operation : t = 2.6ns (typ.)  
pd  
at V  
= 5V, 50pF  
CC  
Operation voltage range  
5.5-V tolerant inputs  
: V  
= 1.65 to 5.5V  
CC  
SON5-P-0.5  
Weight: 0.003 g (typ.)  
(ESV)  
5.5-V power down protection output  
Matches the performance of TC74LCX series when operated at  
3.3 V V  
.
CC  
Marking  
Product name  
J B  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Supply voltage  
Symbol  
Rating  
Unit  
Pin Assignment (top view)  
V
0.5 to 6  
0.5 to 6  
V
V
CC  
DC input voltage  
V
IN  
G 1  
5
V
CC  
0.5 to 6 (Note 1)  
DC output voltage  
V
V
OUT  
0.5 to V +0.5 (Note 2)  
CC  
IN A  
2
3
Input diode current  
Output diode current  
DC output current  
I
20  
mA  
IK  
I
20 (Note 3) mA  
OK  
GND  
4
OUT Y  
I
±50  
±50  
mA  
mA  
mW  
°C  
OUT  
DC V /ground current  
CC  
I
CC  
Power dissipation  
P
150  
D
Storage temperature  
T
stg  
65 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: V  
= 0V or high impedance condition  
CC  
Note 2: High or Low state. Do not exceed I  
of absolute maximum ratings.  
OUT  
Note 3: V  
< GND  
OUT  
1
2009-09-18  

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