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TC7SZ125FUT5LT PDF预览

TC7SZ125FUT5LT

更新时间: 2024-11-24 21:14:35
品牌 Logo 应用领域
东芝 - TOSHIBA 驱动光电二极管逻辑集成电路
页数 文件大小 规格书
7页 168K
描述
Buffer/Line Driver 1-CH Non-Inverting 3-ST CMOS 5-Pin SSOP T/R

TC7SZ125FUT5LT 技术参数

生命周期:Active包装说明:TSSOP,
Reach Compliance Code:unknown风险等级:5.79
系列:HC/UHJESD-30 代码:R-PDSO-G5
长度:2 mm逻辑集成电路类型:BUS DRIVER
位数:1功能数量:1
端口数量:2端子数量:5
最高工作温度:85 °C最低工作温度:-40 °C
输出特性:3-STATE输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
传播延迟(tpd):11.5 ns座面最大高度:1.1 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL宽度:1.25 mm
Base Number Matches:1

TC7SZ125FUT5LT 数据手册

 浏览型号TC7SZ125FUT5LT的Datasheet PDF文件第2页浏览型号TC7SZ125FUT5LT的Datasheet PDF文件第3页浏览型号TC7SZ125FUT5LT的Datasheet PDF文件第4页浏览型号TC7SZ125FUT5LT的Datasheet PDF文件第5页浏览型号TC7SZ125FUT5LT的Datasheet PDF文件第6页浏览型号TC7SZ125FUT5LT的Datasheet PDF文件第7页 
TC7SZ125F/FU  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7SZ125F,TC7SZ125FU  
Bus Buffer 3-State Output  
TC7SZ125F  
Features  
High output current: ±24 mA (min) at V  
= 3 V  
CC  
Super high speed operation: t 2.6 ns (typ.) at V  
= 5 V, 50 pF  
pd  
CC  
Operation voltage range: V  
5.5-V tolerant inputs  
= 1.8 to 5.5 V  
CC  
5.5-V power down protection output  
Matches the performance of TC74LCX series when operated at  
3.3 V V  
(SMV)  
.
CC  
TC7SZ125FU  
Marking  
Product name  
J B  
(USV)  
Weight  
SSOP5-P-0.95  
SSOP5-P-0.65A  
: 0.016 g (typ.)  
: 0.006 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Supply voltage  
Symbol  
Rating  
Unit  
Pin Assignment (top view)  
V
0.5 to 6  
V
V
CC  
DC input voltage  
V
0.5 to 6  
IN  
G 1  
5
V
CC  
0.5 to 6 (Note 1)  
DC output voltage  
V
OUT  
V
0.5 to Vcc+0.5 (Note 2)  
IN A  
2
3
Input diode current  
Output diode current  
DC output current  
I
20  
20(Note 3)  
±50  
mA  
mA  
mA  
mA  
mW  
°C  
IK  
I
OK  
GND  
4
OUT Y  
I
OUT  
DC V /ground current  
CC  
I
±50  
CC  
Power dissipation  
P
200  
D
Storage temperature  
Lead temperature (10s)  
T
stg  
65 to 150  
260  
T
°C  
L
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Note 1: VCC = 0V or high impedance condition.  
Note 2: High or Low state. Do not exceed IOUT of absolute maximum ratings.  
Note 3: VOUT < GND  
1
2009-09-18  

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