Datasheet > TC7SA00F_07

TC7SA00F_07

更新时间： 2024-11-23 03:09:43

品牌	Logo	应用领域
东芝 - TOSHIBA		栅
页数	文件大小	规格书
9页	213K
描述
2-Input NAND Gate

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中文翻译

获取价格

数据手册

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TC7SA00F_07 数据手册

TC7SA00F/FU

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SA00F,TC7SA00FU

2-Input NAND Gate

Features

TC7SA00F

•

Low voltage operation : V

= 1.8~3.6 V

High speed operation : t = 2.8 ns (max) (V

= 3.0~3.6 V)

= 2.3~2.7 V)

= 1.8 V)

: t = 3.7 ns (max) (V

: t = 7.4 ns (max) (V

•

High Output current

: I /I = ±24 mA (min) (V

= 3.0 V)

= 2.3 V)

OH OL

: I /I = ±18 mA (min) (V

OH OL

: I /I = ±6 mA (min) (V

= 1.8 V)

OH OL

•

3.6-V tolerant input.

TC7SA00FU

3.6-V power down protection output.

TC74VCX00FT equivalent.

Weight

SSOP5-P-0.95 : 0.016 g (typ.)

SSOP5-P-0.65A : 0.006 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Power supply voltage

Symbol

Rating

Unit

−0.5~4.6

DC input voltage

−0.5~4.6

−0.5~4.6 (Note 1)

DC output voltage

OUT

−0.5~V

+ 0.5 (Note 2)

−50

Input diode current

Output diode current

DC output current

Power dissipation

°C

−50 (Note 3)

±50

OUT

200

DC V /ground current

±100

Storage temperature range

−65~150

stg

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1:

= 0 V

Note 2: High or low state. I

absolute maximum rating must be observed.

OUT

Note 3:

OUT

< GND

2007-11-01

12 3 4 5 6 7...9

中文翻译

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