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TC7SA32FU PDF预览

TC7SA32FU

更新时间: 2024-01-02 04:42:53
品牌 Logo 应用领域
东芝 - TOSHIBA 栅极触发器逻辑集成电路光电二极管
页数 文件大小 规格书
9页 213K
描述
2-Input OR Gate

TC7SA32FU 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:SSOP
包装说明:0.65 MM PITCH, PLASTIC, SSOP-5针数:5
Reach Compliance Code:unknown风险等级:5.81
Is Samacsys:N系列:HC/UH
JESD-30 代码:R-PDSO-G5长度:2 mm
负载电容(CL):30 pF逻辑集成电路类型:OR GATE
最大I(ol):0.006 A功能数量:1
输入次数:2端子数量:5
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP5/6,.08封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH电源:2/3.3 V
Prop。Delay @ Nom-Sup:7.4 ns传播延迟(tpd):7.4 ns
认证状态:Not Qualified施密特触发器:NO
座面最大高度:1.1 mm子类别:Gates
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL宽度:1.25 mm
Base Number Matches:1

TC7SA32FU 数据手册

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TC7SA32F/FU  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7SA32F,TC7SA32FU  
2-Input OR Gate  
Features  
TC7SA32F  
Low voltage operation : V  
= 1.8~3.6 V  
CC  
High speed operation : t = 2.8 ns (max) (V  
= 3.0~3.6 V)  
= 2.3~2.7 V)  
= 1.8 V)  
pd  
CC  
CC  
CC  
: t = 3.7 ns (max) (V  
pd  
: t = 7.4 ns (max) (V  
pd  
High Output current  
: I /I = ±24 mA (min) (V  
= 3.0 V)  
= 2.3 V)  
OH OL  
CC  
: I /I = ±18 mA (min) (V  
OH OL  
CC  
: I /I = ±6 mA (min) (V  
= 1.8 V)  
OH OL  
CC  
3.6-V tolerant inputs  
TC7SA32FU  
3.6-V power down protection output  
TC74VCX32 equivalent  
Weight  
SSOP5-P-0.95 : 0.016 g (typ.)  
SSOP5-P-0.65A : 0.006 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Power supply voltage  
Symbol  
Rating  
Unit  
V
V
0.5~4.6  
CC  
DC input voltage  
DC output voltage  
V
0.5~4.6  
V
IN  
0.5~4.6 (Note 1)  
V
V
OUT  
0.5~V  
+ 0.5 (Note 2)  
50  
CC  
Input diode current  
Output diode current  
DC output current  
Power dissipation  
I
mA  
mA  
mA  
mW  
mA  
°C  
IK  
I
50 (Note 3)  
±50  
OK  
I
OUT  
P
200  
D
DC V /ground current  
CC  
I
±100  
CC  
Storage temperature range  
T
stg  
65~150  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1:  
V
CC  
= 0 V  
Note 2: High or low state. I  
absolute maximum rating must be observed.  
OUT  
Note 3:  
V
OUT  
< GND  
1
2007-11-01  

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