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TC7SAU04F PDF预览

TC7SAU04F

更新时间: 2024-11-18 22:22:23
品牌 Logo 应用领域
东芝 - TOSHIBA 栅极逻辑集成电路光电二极管
页数 文件大小 规格书
8页 166K
描述
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SAU04F 技术参数

生命周期:Obsolete零件包装代码:SSOP
包装说明:0.95 MM PITCH, PLASTIC, SSOP-5针数:5
Reach Compliance Code:unknown风险等级:5.83
Is Samacsys:N系列:HC/UH
JESD-30 代码:R-PDSO-G5长度:2.9 mm
逻辑集成电路类型:INVERTER功能数量:1
输入次数:1端子数量:5
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:LSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
传播延迟(tpd):8.4 ns认证状态:Not Qualified
座面最大高度:1.4 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.95 mm端子位置:DUAL
宽度:1.6 mmBase Number Matches:1

TC7SAU04F 数据手册

 浏览型号TC7SAU04F的Datasheet PDF文件第2页浏览型号TC7SAU04F的Datasheet PDF文件第3页浏览型号TC7SAU04F的Datasheet PDF文件第4页浏览型号TC7SAU04F的Datasheet PDF文件第5页浏览型号TC7SAU04F的Datasheet PDF文件第6页浏览型号TC7SAU04F的Datasheet PDF文件第7页 
TC7SAU04F/FU  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7SAU04F,TC7SAU04FU  
Inverter (unbuffer) with 3.6 V Tolerant Input  
Features  
TC7SAU04F  
·
·
·
·
Low voltage operation : V  
= 1.8~3.6 V  
CC  
CC  
Low power disipation : I  
< 20 µA (max)  
(V  
= 3.6 V, Ta = 40~85°C)  
CC  
High speed operation : t = 3.5 ns (max) (V  
= 3.0~3.6 V)  
= 2.3~2.7 V)  
= 1.8 V)  
pd  
CC  
CC  
CC  
: t = 4.2 ns (max) (V  
pd  
: t = 8.4 ns (max) (V  
pd  
·
High Output current : I /I  
= ±24 mA (min) (V  
= ±18 mA (min) (V  
= ±6 mA (min) (V = 1.8 V)  
CC  
= 3.0 V)  
= 2.3 V)  
OH OL  
CC  
CC  
: I /I  
OH OL  
TC7SAU04FU  
: I /I  
OH OL  
·
·
Latch-up performance : ±300 mA or more  
ESD performance  
: Human body model > ±200 V  
: Machine model > ±2000 V  
·
Power down protection is provided on all inputs and outputs.  
Weight  
SSOP5-P-0.95 : 0.016 g (typ.)  
SSOP5-P-0.65A : 0.006 g (typ.)  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Power supply voltage  
DC input voltage  
V
0.5~4.6  
0.5~4.6  
V
V
CC  
V
IN  
DC output voltage  
Input diode current  
Output diode current  
DC output current  
Power dissipation  
V
0.5~V  
+ 0.5 (Note 1)  
CC  
V
OUT  
I
50  
mA  
mA  
mA  
mW  
mA  
°C  
IK  
I
±50 (Note 2)  
OK  
I
±50  
200  
OUT  
P
D
DC V /ground current  
CC  
I
±100  
CC  
Storage temperature range  
T
65~150  
stg  
Note 1: High or low state. I  
absolute maximum rating be observed.  
OUT  
Note 2: V  
OUT  
< GND, V  
OUT  
> V  
CC  
1
2002-12-13  

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