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TC7SA08FU(T5LFT) PDF预览

TC7SA08FU(T5LFT)

更新时间: 2024-01-02 21:29:16
品牌 Logo 应用领域
东芝 - TOSHIBA 逻辑集成电路
页数 文件大小 规格书
8页 226K
描述
AND Gate

TC7SA08FU(T5LFT) 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.75
逻辑集成电路类型:AND GATEBase Number Matches:1

TC7SA08FU(T5LFT) 数据手册

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TC7SA08F/FU  
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic  
TC7SA08F,TC7SA08FU  
2-Input AND Gate  
TC7SA08F  
Features  
Low voltage operation : V  
= 1.8 to 3.6 V  
CC  
High speed operation : t = 2.8 ns (max) (V  
= 3.0 to 3.6 V)  
= 2.3 to 2.7 V)  
= 1.8 V)  
pd  
CC  
CC  
CC  
: t = 3.7 ns (max) (V  
pd  
: t = 7.4 ns (max) (V  
pd  
High output current  
: I /I = ±24 mA (min) (V  
= 3.0 V)  
= 2.3 V)  
OH OL  
CC  
: I /I = ±18 mA (min) (V  
OH OL  
CC  
(SMV)  
: I /I = ±6 mA (min) (V  
= 1.8 V)  
OH OL  
CC  
TC7SA08FU  
3.6-V tolerant inputs.  
3.6-V power down protection output.  
TC74VCX08FT equivalent.  
Marking  
Product name  
(USV)  
V 2  
Weight  
SSOP5-P-0.95 : 0.016 g (typ.)  
SSOP5-P-0.65A : 0.006 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Pin Assignment (top view)  
Characteristics  
Supply voltage  
Symbol  
Rating  
Unit  
IN B  
IN A  
GND  
1
2
3
5
V
CC  
V
0.5 to 4.6  
0.5 to 4.6  
V
V
CC  
DC input voltage  
V
IN  
0.5 to 4.6 (Note 1)  
DC output voltage  
V
V
OUT  
0.5 to V +0.5 (Note 2)  
CC  
4
OUT Y  
Input diode current  
Output diode current  
DC output current  
Power dissipation  
I
50  
mA  
mA  
mA  
mW  
mA  
°C  
IK  
I
50  
±50  
(Note 3)  
OK  
I
OUT  
P
200  
D
DC V /ground current  
CC  
I
±100  
CC  
Storage temperature range  
T
stg  
65 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings and the operating ranges.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: V  
= 0 V  
CC  
Note 2: High or Low State. I  
absolute maximum rating must be observed.  
OUT  
Note 3: V  
< GND  
OUT  
1
2009-07-29  

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