生命周期: | Obsolete | 零件包装代码: | SOJ |
包装说明: | SOJ, | 针数: | 40 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.02 | 风险等级: | 5.84 |
访问模式: | FAST PAGE | 最长访问时间: | 70 ns |
JESD-30 代码: | R-PDSO-J40 | 长度: | 26.04 mm |
内存密度: | 4194304 bit | 内存集成电路类型: | OTHER DRAM |
内存宽度: | 16 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 40 |
字数: | 262144 words | 字数代码: | 256000 |
组织: | 256KX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOJ | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 认证状态: | Not Qualified |
座面最大高度: | 3.7 mm | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
端子形式: | J BEND | 端子节距: | 1.27 mm |
端子位置: | DUAL | 宽度: | 10.16 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TC51V4260BJLL-80 | TOSHIBA |
获取价格 |
IC 256K X 16 OTHER DRAM, 80 ns, PDSO40, SOJ-40, Dynamic RAM | |
TC51V4260DFTS-60 | TOSHIBA |
获取价格 |
IC 256K X 16 FAST PAGE DRAM, 60 ns, PDSO40, 0.400 INCH, PLASTIC, TSOP-44/40, Dynamic RAM | |
TC51V4260DFTS-70 | TOSHIBA |
获取价格 |
IC 256K X 16 FAST PAGE DRAM, 70 ns, PDSO40, 0.400 INCH, PLASTIC, TSOP-44/40, Dynamic RAM | |
TC51V4265DFTS-60 | TOSHIBA |
获取价格 |
IC 256K X 16 EDO DRAM, 60 ns, PDSO40, 0.400 INCH, PLASTIC, TSOP-44/40, Dynamic RAM | |
TC51V4265DFTS-70 | TOSHIBA |
获取价格 |
IC 256K X 16 EDO DRAM, 70 ns, PDSO40, 0.400 INCH, PLASTIC, TSOP-44/40, Dynamic RAM | |
TC51V4400AFT-80 | TOSHIBA |
获取价格 |
IC 1M X 4 OTHER DRAM, 80 ns, PDSO20, 0.300 INCH, TSOP2-26/20, Dynamic RAM | |
TC51V4400AFTL-80 | TOSHIBA |
获取价格 |
IC 1M X 4 FAST PAGE DRAM, 80 ns, PDSO20, 0.300 INCH, PLASTIC, TSOP-26/20, Dynamic RAM | |
TC51V4400APL-10 | TOSHIBA |
获取价格 |
IC,DRAM,FAST PAGE,1MX4,CMOS,DIP,20PIN,PLASTIC | |
TC51V4400APL-80 | TOSHIBA |
获取价格 |
IC,DRAM,FAST PAGE,1MX4,CMOS,DIP,20PIN,PLASTIC | |
TC51V4400ASJ-80 | TOSHIBA |
获取价格 |
IC 1M X 4 OTHER DRAM, 80 ns, PDSO20, SOJ-26/20, Dynamic RAM |