Datasheet > TC3918

TC3918

更新时间： 2024-09-27 06:15:43

品牌	Logo	应用领域
全讯科技 - TRANSCOM		/
页数	文件大小	规格书
3页	229K
描述
Packaged Single-Bias Low Noise PHEMT GaAs FETs

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TC3918 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.78
Base Number Matches：	1

TC3918 数据手册

TC3918

REV1_20070503

Packaged Single-Bias Low Noise PHEMT GaAs FETs

FEATURES

ꢀ 0.7 dB Typical Noise Figure at 12 GHz

ꢀ High Associated Gain: Ga = 13 dB Typical at 12 GHz

ꢀ 18dBm Typical Power at 12 GHz

ꢀ 13 dB Typical Linear Power Gain at 12 GHz

ꢀ Lg = 0.25 µm, Wg = 160 µm

PHOTO ENLARGEMENT

ꢀ 100 % DC Tested

ꢀ Micro-X Metal Ceramic Package

DESCRIPTION

The TC3918 is a single-bias low noise ceramic micro-x packaged device with TC1101 PHEMT GaAs FETs,

which is designed to provide the single power supply application. The device is suitable for oscillator, low noise

amplifier in a wide range of commercial applications. All devices are 100% DC tested to assure consistent quality.

ELECTRICAL SPECIFICATIONS (T_A=25 °C)

Symbol

Conditions

Noise Figure at V_DS= 2 V, f = 12GHz

Associated Gain at V_DS= 2 V, f = 12GHz

MIN

TYP

0.7

MAX

1.2

UNIT

16.5

G_a

P_1dBOutput Power at 1dB Gain Compression Point, f = 12GHz V_DS= 4 V

G_L

I_DS

R_th

Linear Power Gain,

= 12GHz V_DS= 4 V

Drain-Source Current at V_DS= 4 V

Thermal Resistance

230

°C/W

TYPICAL NOISE PARAMETERS (T_A=25 °C)

ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)

V_DS= 4 V

Frequency NF_opt

Γ_opt

Symbol

V_DS

P_in

Parameter

Rating

7.0 V

G_A(dB)

Rn/50

(GHz)

(dB)

0.46

0.49

0.52

0.56

0.64

0.73

0.85

1.08

1.33

MAG

0.80

0.69

0.56

0.42

0.31

0.23

0.21

0.26

0.41

ANG

Drain-Source Voltage

RF Input Power, CW

Continuous Dissipation

Channel Temperature

Storage Temperature

17.7

16.1

14.6

13.2

12.0

11.0

10.6

10.5

10.2

0.67

0.58

0.45

0.32

0.19

0.14

0.13

0.18

0.38

18 dBm

P_T

150 mW

T_CH

175 °C

103

146

-161

-97

-19

T_STG

-65°C to +175°C

HANDLING PRECAUTIONS:

The user must operate in a clean, dry environment.

Electrostatic Discharge (ESD) precautions should be

observed at all stages of storage, handling, assembly,

and testing. The static discharge must be less than

300V.

TRANSCOM, INC., 90 Dasoong 7^thRoad, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

P 1 / 3

Fax: 886-6-5051602

12 3

中文翻译

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与TC3918相关器件

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TC391AL	ETC	获取价格	DUAL INTERFACE BUFFERS / DUAL 2-INPUT NAND/AND/OR/NOR / DUAL 4-INPUT AND/NAND WITH EXPANDE
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TC392CL	ETC	获取价格	DUAL INTERFACE BUFFERS / DUAL 2-INPUT NAND/AND/OR/NOR / DUAL 4-INPUT AND/NAND WITH EXPANDE
TC393	ETC	获取价格	DUAL INTERFACE BUFFERS / DUAL 2-INPUT NAND/AND/OR/NOR / DUAL 4-INPUT AND/NAND WITH EXPANDE
TC3938	TRANSCOM	获取价格	Packaged Single-Bias Medium Power PHEMT GaAs FETs

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