Datasheet > TC3957

TC3957

更新时间： 2024-02-19 12:44:55

品牌	Logo	应用领域
全讯科技 - TRANSCOM		/
页数	文件大小	规格书
3页	193K
描述
1W Packaged Single-Bias PHEMT GaAs Power FETs

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中文翻译

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技术参数
数据手册

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TC3957 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84

TC3957 数据手册

TC3957

REV2_20080516

1W Packaged Single-Bias PHEMT GaAs Power FETs

FEATURES

• 1W Typical Output Power at 6GHz

• 10dB Typical Linear Power Gain at 6GHz

• High Linearity: IP3 = 40 dBm Typical at 6GHz

• High Power Added Efficiency:

Nominal PAE of 35% at 6GHz

PHOTO ENLARGEMENT

• Breakdown Voltage: BV_DGO≥ 15V

• Lg = 0.35 µm, Wg = 2.4 mm

• 100 % DC Tested

• Suitable for High Reliability Application

• Lost Cost Ceramic Package

DESCRIPTION

The TC3957 is a self-bias Cu-based ceramic packaged device with TC1501N PHEMT GaAs FETs, which is designed

to provide the single power supply application. The Cu-based ceramic package provides excellent thermal

conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and ground the source,

which is suitable for oscillator, power amplifier application in a wide range of commercial application. All devices are

100% DC tested to assure consistent quality.

ELECTRICAL SPECIFICATIONS (T_A=25)

Symbol

P_1dB

G_L

CONDITIONS

MIN TYP MAX UNIT

Output Power at 1dB Gain Compression Point, f = 6GHz V_DS= 8 V

Linear Power Gain, f = 6GHz V_DS= 8 V

Intercept Point of the 3^rd-order Intermodulation, f = 6GHz V_DS= 8 V, *P_SCL= 17 dBm

Power Added Efficiency at 1dB Compression Power, f = 6GHz

Drain-Source Current at V_DS= 8 V

dBm

IP3

dBm

PAE

I_DS

300

Volts

°C/W

BV_DGODrain-Gate Breakdown Voltage at I_DGO= 1.2mA

R_thThermal Resistance

Note: *P_SCL: Output Power of Single Carrier Level.

TRANSCOM, INC., 90 Dasoong 7^thRoad, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

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