Datasheet > TC3953

TC3953

更新时间： 2024-09-27 03:28:47

品牌	Logo	应用领域
全讯科技 - TRANSCOM		/
页数	文件大小	规格书
2页	83K
描述
1 W Single-Bias GaAs Power PHEMTs prematched for 5~8 GHz

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TC3953 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.7
Base Number Matches：	1

TC3953 数据手册

TC3953

PRE2_20070503

- Preliminary Datasheet -

1 W Single-Bias GaAs Power PHEMTs prematched for 5~8 GHz

FEATURES

•

Prematched for 5~8 GHz

1W of Typical Output Power at 5~8 GHz

8dB of Typical Linear Power Gain at 8 GHz

High Linearity: IP3 = 40 dBm Typical at 5~8 GHz

High Power Added Efficiency: Nominal PAE of 35 % at 5~8 GHz

Breakdown Voltage: BV_DGO≥ 15V

Wg = 2.4 mm

PHOTO ENLARGEMENT

100 % DC Tested

Suitable for High Reliability Application

Lost Cost SMT Ceramic Package

DESCRIPTION

The TC3953 is a single-bias and prematched GaAs PHEMT. It is designed for use in low cost and high

volume 1W amplifiers for 5~8GHz. It provides typical gain of 8dB and P1dB of 30dBm at 8GHz. The

single positive drain bias is 9V and the typical drain-source current is 300mA. The device is packaged

in copper based ceramic 10 pins SMT packages. The copper based carrier of the package allows direct

soldering of the device to the PCB.

ELECTRICAL SPECIFICATIONS (T_A=25℃)

MIN

TYP

MAX

UNIT

dBm

Symbol

P_1dB

G_L

CONDITIONS

Output Power at 1dB Gain Compression Point, f = 8 GHz V_DS= 9V

Linear Power Gain, f = 8 GHz V_DS= 9V

Intercept Point of the 3^rd-order Intermodulation, f = 8 GHz V_DS= 9V, *P_SCL= 17 dBm

Power Added Efficiency at 1dB Compression Power, f = 8GHz

Drain-Source Current at V_DS= 9V

dBm

IP3

PAE

I_DS

300

Volts

BV_DGODrain-Gate Breakdown Voltage at I_DGO= 1.2mA

Note: *P_SCL: Output Power of Single Carrier Level.

TRANSCOM, INC., 90 Dasoong 7^thRoad, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

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