Datasheet > TC3953A

TC3953A

更新时间： 2024-09-27 03:28:47

品牌	Logo	应用领域
全讯科技 - TRANSCOM		/
页数	文件大小	规格书
2页	92K
描述
1W Single-Bias and Prematched GaAs Power PHEMTs using SMT package

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TC3953A 数据手册

TC3953A

PRE3_20070503

- Preliminary Datasheet -

1W Single-Bias and Prematched GaAs Power PHEMTs using SMT package

FEATURES

• Prematched for 5~10 GHz

• 1W Typical Output Power at 5~10 GHz

• 6.5dB Typical Linear Power Gain at 10 GHz

• High Linearity: IP3 = 40 dBm Typical at 5~10 GHz

• High Power Added Efficiency: Nominal PAE of 35% at 5~10 GHz

• Breakdown Voltage: BV_DGO≥ 15V

• Wg = 2.4 mm

PHOTO ENLARGEMENT

• 100 % DC Tested

• Suitable for High Reliability Application

• Lost Cost SMT Ceramic Package

DESCRIPTION

The TC3953A is a single-bias and prematched GaAs PHEMT. It is designed for use in low cost, high

volume, and 5~10 GHz 1W amplifiers. It provides a typical gain of 6.5 dB and P1dB of 30dBm at 10

GHz. The single positive drain bias is 9V and the typical drain-source current is 300mA. The device is

packaged in copper based ceramic 10 pins SMT packages. The copper based carrier of the package

allows direct soldering of the device to the PCB.

ELECTRICAL SPECIFICATIONS (T_A=25℃)

Symbol

P_1dB

G_L

CONDITIONS

MIN

TYP

MAX

UNIT

dBm

Output Power at 1dB Gain Compression Point, f = 10 GHz V_DS= 9V

Linear Power Gain, f = 10 GHz V_DS= 9V

Intercept Point of the 3^rd-order Intermodulation, f = 10 GHz V_DS= 9V, *P_SCL= 17 dBm

Power Added Efficiency at 1dB Compression Power, f = 10 GHz

Drain-Source Current at V_DS= 9V

5.5

6.5

IP3

dBm

PAE

I_DS

300

BV_DGODrain-Gate Breakdown Voltage at I_DGO= 1.2mA

Volts

Note: *P_SCL: Output Power of Single Carrier Level.

TRANSCOM, INC., 90 Dasoong 7^thRoad, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

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