Datasheet > TC3977

TC3977

更新时间： 2024-02-23 04:04:35

品牌	Logo	应用领域
全讯科技 - TRANSCOM		/
页数	文件大小	规格书
1页	28K
描述
3 W Packaged Single-Bias PHEMT GaAs Power FETs

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TC3977 数据手册

TC3977

PRE2_20050418

Preliminary

3 W Packaged Single-Bias PHEMT GaAs Power FETs

FEATURES

• 3W Typical Output Power

PHOTO ENLARGEMENT

• 12dB Typical Linear Power Gain at 2.45GHz

• High Linearity: IP3 = 45 dBm Typical

• High Power Added Efficiency: Nominal PAE of 35%

• Breakdown Voltage: BV_DGO≥ 18V

• Wg = 7.5 mm

• 100 % DC Tested

• Suitable for High Reliability Application

DESCRIPTION

The TC3977 is a single-bias Cu-based ceramic packaged device with TC1706N PHEMT GaAs FETs, which is

designed to provide the single power supply. The Cu-based ceramic package provides excellent thermal

conductivity for the GaAs FET. The device is suitable for oscillator and power amplifiers in a wide range of

commercial application. All devices are 100% DC tested to assure consistent quality.

ELECTRICAL SPECIFICATIONS (@ 2.45 GHz)

MIN

TYP

MAX

UNIT

Symbol

P_1dB

G_L

CONDITIONS

Output Power at 1dB Gain Compression Point V_DS= 10 V

Linear Power Gain V_DS= 10 V

34.5

35.5

dBm

IP3

Intercept Point of the 3^rd-order Intermodulation V_DS= 10 V, *P_SCL= 24 dBm

Power Added Efficiency at 1dB Compression Power

Drain-Source Current at V_DS= 10 V

dBm

PAE

I_DS

900

BV_DGODrain-Gate Breakdown Voltage at I_DGO= 3.75mA

R_thThermal Resistance

Note: *P_SCL: Output Power of Single Carrier Level.

Volts

°C/W

5.3

TRANSCOM, INC., 90 Dasoong 7^thRoad, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

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