TC3921

更新时间： 2024-09-27 03:28:47

品牌	Logo	应用领域
全讯科技 - TRANSCOM		晶体小信号场效应晶体管射频小信号场效应晶体管
页数	文件大小	规格书
3页	115K
描述
Low - Cost Single-Bias Medium Power PHEMT GaAs FETs

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中文翻译

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技术参数
数据手册

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TC3921 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.78
Is Samacsys：	N	Base Number Matches：	1

TC3921 数据手册

TC3921

REV1_20070503

Low-Cost Single-Bias Medium Power PHEMT GaAs FETs

FEATURES

PHOTO ENLARGEMENT

ꢀ 22 dBm Typical Output Power at 6 GHz

ꢀ High Linear Power Gain: G_L= 12 dB Typical at 6 GHz

ꢀ Lg = 0.25 µm, Wg = 300 µm

ꢀ 100 % DC Tested

ꢀ Low Cost Plastic SOT143R Package

DESCRIPTION

The TC3921 is a single-bias medium power SOT143R packaged device with TC1201 PHEMT chip, which is

designed to provide the single power supply applications. The device is suitable for oscillator, medium power

amplifier in a wide range of commercial applications. All devices are 100% DC tested to assure consistent

quality.

ELECTRICAL SPECIFICATIONS (T_A=25 °C)

Symbol

P_1dB

G_L

Conditions

Output Power at 1dB Gain Compression Point, f = 6GHz, V_DS= 5 V

Linear Power Gain, f = 6 GHz, V_DS= 5 V

Drain-Source Current at V_DS= 5 V

MIN

TYP

MAX

UNIT

dBm

I_DS

R_th

Thermal Resistance

125

°C/W

HANDLING PRECAUTIONS:

ABSOLUTE MAXIMUM RATINGS (T_A=25 °C)

Symbol

V_DS

P_in

Parameter

Rating

7.0 V

The user must operate in a clean, dry environment.

Electrostatic Discharge (ESD) precautions should be

observed at all stages of storage, handling, assembly,

and testing. The static discharge must be less than

300V.

Drain-Source Voltage

RF Input Power, CW

Continuous Dissipation

Channel Temperature

Storage Temperature

21 dBm

P_T

300 mW

T_CH

175 °C

T_STG

- 65 °C to +175 °C

TRANSCOM, INC., 90 Dasoong 7^thRoad, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

P 1 / 3

Fax: 886-6-5051602

12 3

中文翻译

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