Datasheet > TBL090P02-3DL8

TBL090P02-3DL8

更新时间： 2024-04-09 18:59:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	598K
描述
35A, 20V, 40W, P Channel, Power MOSFETs

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TBL090P02-3DL8 数据手册

P-Channel Enhancement Mode MOSFET

TBL090P02-3DL8

Package Outline Dimensions (Unit: mm)

PDFN3×3-8L

Dimension

Min.

2.90

0.65

0.20

0.00

0.55

0.20

0.70

0.10

3.15

0.20

2.35

1.500

Max.

3.10

0.85

0.40

0.10

0.75

0.40

1.10

0.20

3.45

0.40

2.55

1.900

Mounting Pad Layout (Unit: mm)

PDFN3×3-8L

IMPORTANT NOTICE

Changzhou Galaxy Century Microelectronics (GME) reserves the right to make changes without further

notice to any product information (copyrighted) herein to make corrections, modifications,

improvements, or other changes. GME does not assume any liability arising out of the application or

use of any product described herein; neither does it convey any license under its patent rights, nor the

rights of others.

MTM0560A: April 2021

www.gmesemi.com

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