Datasheet > TBL0K6P10-3L

TBL0K6P10-3L

更新时间： 2024-04-09 19:00:00

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	556K
描述
0.9A, 100V, 0.9W, P Channel, Power MOSFETs

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数据手册

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TBL0K6P10-3L 数据手册

P-Channel Enhancement Mode MOSFET

TBL0K6P10-3L

Features



Low on resistance

Low gate charge

Fast switching characteristic

ESD protected gate up to 2kV HBM

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: SOT-23-3L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

SOT-23-3L

Ordering Information

Part Number

Package

SOT-23-3L

Shipping Quantity

Marking Code

TBL0K6P10-3L

3000 pcs / Tape & Reel

0K6P10

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-100

±20

-0.9

-0.7

-3.6

Gate-to-Source Voltage

Continuous Drain Current (V_GS= -10V, T_A= 25°C ) ^*1

Continuous Drain Current (V_GS= -10V, T_A= 70°C ) ^*1

Pulsed Drain Current ^*2

I_D

I_DM

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_A= 25°C ) ^*1

Power Dissipation (T_A= 70°C ) ^*1

Thermal Resistance Junction-to-Air ^*1

Operating Junction Temperature Range

Storage Temperature Range

0.9

0.6

P_D

R_θJA

T_J

145

°C/W

°C

-55 ~ +150

T_STG

°C

MTM0850A: May 2022

www.gmesemi.com

12 3 4 5 6

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