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TBL095N10TD PDF预览

TBL095N10TD

更新时间: 2024-04-09 19:01:39
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
6页 689K
描述
63A, 100V, 69W, N Channel, Power MOSFETs

TBL095N10TD 数据手册

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N-Channel Enhancement Mode MOSFET  
TBL095N10TD  
Features  
Low RDS(ON) & FOM  
Extremely low switching loss  
Excellent stability and uniformity  
Halogen free  
Qualified to AEC-Q101 standards for high reliability  
Mechanical Data  
Case: TO-252  
Molding Compound: UL Flammability Classification Rating 94V-0  
Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208  
TO-252  
Ordering Information  
Part Number  
Package  
Shipping Quantity  
Marking Code  
TBL095N10TD  
TO-252  
80 pcs / Tube & 2500 pcs / Tape & Reel  
095N10TD  
Maximum Ratings (@ TC = 25°C unless otherwise specified)  
Parameter  
Drain-to-Source Voltage  
Symbol  
Value  
Unit  
VDSS  
VGSS  
ID  
100  
±20  
63  
V
V
Gate-to-Source Voltage  
Continuous Drain Current (TC = 25°C )  
Continuous Drain Current (TC = 100°C)  
Pulsed Drain Current *3  
A
ID  
38  
A
IDM  
EAS  
252  
23  
A
Single Pulse Avalanche Energy *3, 6  
mJ  
Thermal Characteristics  
Parameter  
Symbol  
Value  
Unit  
Power Dissipation (TC = 25°C) *2  
PD  
RθJA  
RθJC  
TJ  
69  
55  
W
Thermal Resistance Junction-to-Air *1, 4  
Thermal Resistance Junction-to-Case  
Operating Junction Temperature Range  
Storage Temperature Range  
°C /W  
°C /W  
1.8  
-55 ~ +150  
-55 ~ +150  
°C  
°C  
TSTG  
MTM0978A: September 2022 [1.1]  
www.gmesemi.com  
1

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