Datasheet > TBL0K6P10D

TBL0K6P10D

更新时间： 2024-04-09 19:02:25

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	410K
描述
5A, 100V, 31W, P Channel, Power MOSFETs

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中文翻译

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数据手册

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TBL0K6P10D 数据手册

P-Channel Enhancement Mode MOSFET

TBL0K6P10D

Features



Low on resistance

Low gate charge

Fast switching characteristic

JESD22-A114-B ESD rating of class 2 per human body model

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

TO-252

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBL0K6P10D

TO-252

80 pcs / Tube & 2500 pcs / Tape & Reel

0K6P10D

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

-100

±20

Gate-to-Source Voltage

Continuous Drain Current

-5

Pulsed Drain Current

I_DM

-20

Power Dissipation (T_C= 25°C)

Operating Junction Temperature Range

Storage Temperature Range

P_D

°C

T_J

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

°C /W

MTM1325A: July 2023 [P]

www.gmesemi.com

12 3 4 5

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