Datasheet > TBL095N10T-S8

TBL095N10T-S8

更新时间： 2024-04-09 19:00:10

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	542K
描述
11.5A, 100V, 1.4W, N Channel, Power MOSFETs

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TBL095N10T-S8 数据手册

N-Channel Enhancement Mode MOSFET

TBL095N10T-S8

Features



Low R_DS(ON)& FOM

Extremely low switching loss

Excellent stability and uniformity

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: SOP-8

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

SOP-8

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBL095N10T-S8

SOP-8

4000 pcs / Tape & Reel

095N10T

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

100

±20

11.5

9.2

Gate-to-Source Voltage

Continuous Drain Current (T_A= 25°C) ^*2

Continuous Drain Current (T_A= 70°C) ^*2

Continuous Drain Current (T_C= 25°C ) ^*1

Continuous Drain Current (T_C= 100°C) ^*1

Pulsed Drain Current (t_p= 10μs)

I_D

29.5

18.6

I_D

I_DM

E_AS

Single Pulse Avalanche Energy ^*3

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_A= 25°C) ^*1

P_D

R_θJA

P_D

1.4

Thermal Resistance Junction-to-Air ^*1

Power Dissipation (T_A= 25°C) ^*2

°C /W

1.9

Thermal Resistance Junction-to-Air ^*2

Thermal Resistance Junction-to-Case ^*2

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

R_θJC

T_J

°C /W

10.1

-55 ~ +150

°C

T_STG

MTM0943A: July 2023 [1.2]

www.gmesemi.com

12 3 4 5

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