Datasheet > TBL055N085TH

TBL055N085TH

更新时间： 2024-04-09 18:59:08

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	652K
描述
120A, 85V, 174W, N Channel, Power MOSFETs

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TBL055N085TH 数据手册

N-Channel Enhancement Mode MOSFET

TBL055N085TH

Thermal Characteristics

Parameter

Power Dissipation (T_C= 25°C)

Symbol

P_D

Value

174

Unit

Thermal Resistance Junction-to-Air

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

R_θJC

T_J

°C /W

°C

0.72

-55 to +150

T_STG

°C

Electrical Characteristics (@ T_J= 25℃ unless otherwise specified)

Symbol

Parameter

Test Condition

Min. Typ. Max. Unit

Static Characteristics

V_DSS

I_DSS

I_GSS

Drain-Source Breakdown Voltage

V_GS= 0V, I_D= 250μA

V_DS= 85V, V_GS= 0V, T_J=25°C

V_DS= 85V, V_GS= 0V, T_J=125°C

0.25

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

μA

V_GS= ±20V, V_DS= 0V

±1 00

On Characteristics

R_DS(ON)

V_GS(th)

g_fs

Static Drain-Source On-resistance

V_GS= 10V,I_D= 40A

V_DS= V_GS, I_D= 250μA

V_DS=5V, I_D=50A

4.6

2.5

5.5

mΩ

Gate Threshold Voltage

Transconductance

Dynamic Characteristics

C_ISS

C_OSS

C_RSS

Input Capacitance

4329

637

V_GS= 0V

Output Capacitance

V_DS= 40V

f = 1.0MHz

Reverse Transfer Capacitance

Switching Characteristics

t_d(ON)

t_r

t_d(OFF)

t_f

Turn-on Delay Time

Turn-on Rise Time

20.1

38.9

45.1

22.8

V_DD= 40V

R_G= 3Ω

Turn-Off Delay Time

Turn-Off Fall Time

V_GS= 10V

Q_G

Total Gate-Charge

V_DD= 40V, V_GS=10V

I_D=50A, f = 1.0MHz

Q_GS

Q_GD

Gate to Source Charge

Gate to Drain ( “Miller” ) Charge

Source-Drain Diode Characteristics

V_SD

t_rr

Diode Forward Voltage

I_SD= 40A, V_GS= 0V

0.9

1.4

Body Diode Reverse Recovery Time

I_F=20A, d_I/ d_t=500A/μs

Body Diode Reverse Recovery

Charge

Q_rr

560

MTM0941A: November 2020

www.gmesemi.com

123 4 5

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