Datasheet > TBL072N15THB

TBL072N15THB

更新时间： 2024-04-09 18:59:27

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	701K
描述
120A, 150V, 250W, N Channel, Power MOSFETs

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中文翻译

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数据手册

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TBL072N15THB 数据手册

N-Channel Enhancement Mode MOSFET

TBL072N15THB

Features



Super low gate charge

Very low R_DS(ON)

JESD22-A114-B ESD rating of class 1C per human body model

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: TO-263

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matted-Tin plated; Solderable Per MIL-STD-202, Method 208

TO-263

Ordering Information

Part Number

Package

TO-263

Shipping Quantity

Marking Code

TBL072N15THB

50 pcs / Tube & 800 pcs / Tape & Reel

072N15THB

Maximum Ratings (@ T_J= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

150

±20

120

Unit

Gate-to-Source Voltage

V_GSS

Continuous Drain Current (T_C= 25°C )

Continuous Drain Current (T_C= 100°C )

Pulsed Drain Current (t_p= 10μs, T_C= 25°C )

Single Pulse Avalanche Energy ^*3

I_D

I_DM

600

276

E_AS

Thermal Characteristics

Parameter

Power Dissipation (T_C= 25°C)

Symbol

P_D

Value

250

Unit

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

R_θJC

T_J

°C /W

°C

0.5

-55 ~ +150

T_STG

°C

MTM1169A: November 2022 [2.0]

www.gmesemi.com

12 3 4 5

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