Datasheet > TBL060N04T-3DL8

TBL060N04T-3DL8

更新时间： 2024-04-09 19:02:18

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	730K
描述
63A, 40V,38W, N Channel, Power MOSFETs

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数据手册

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TBL060N04T-3DL8 数据手册

N-Channel Enhancement Mode MOSFET

TBL060N04T-3DL8

Features



Ultra-low on-resistance and gate-charge

Advanced shielded-gate technology

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: PDFN3×3-8L

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

PDFN3×3-8L

Ordering Information

Part Number

Package

PDFN3×3-8L

Shipping Quantity

Marking Code

060N04T

TBL060N04T-3DL8

5000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

V_DSS

V_GSS

±20

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C, Silicon Limited) ^*1

Continuous Drain Current (T_C= 100°C, Silicon Limited) ^*1

Continuous Drain Current (T_A= 25°C, Silicon Limited) ^{*2, 3}

Continuous Drain Current (T_A= 100°C, Silicon Limited) ^{*2, 3}

Pulsed Drain Current ^*4

I_D

I_DM

144

Single Pulse Avalanche Energy ^{*5, 6}

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJC

R_θJA

T_J

3.3

°C /W

°C

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*3

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

°C

MTM0727A: June 2022

www.gmesemi.com

12 3 4 5 6

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