Datasheet > TBL075N04D

TBL075N04D

更新时间： 2024-04-09 19:00:30

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	563K
描述
66A, 40V, 65W, N Channel, Power MOSFETs

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数据手册

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TBL075N04D 数据手册

N-Channel Enhancement Mode MOSFET

TBL075N04D

Features



Super low gate charge

Green device available

Excellent c_dV/ d_teffect decline

Advanced high cell density trench technology

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

TO-252

Ordering Information

Part Number

Package

TO-252

Shipping Quantity

Marking Code

TBL075N04D

80 pcs / Tube & 2500 pcs / Tape & Reel

075N04D

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

±20

Gate-to-Source Voltage

Continuous Drain Current (Package limited) T_C= 25°C

Continuous Drain Current (Silicon limited) T_C= 25°C

Pulsed Drain Current

I_D

I_DM

100

Single Pulse Avalanche Energy ^*3

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJC

R_θJA

T_J

1.9

°C /W

°C

Thermal Resistance Junction-to-Case ^*1

Thermal Resistance Junction-to-Air ^*1

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

°C

MTM0806A: June 2022

www.gmesemi.com

12 3 4 5

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