Datasheet > TBL055N10THB

TBL055N10THB

更新时间： 2024-04-09 18:59:20

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	608K
描述
120A, 100V, 102W, N Channel, Power MOSFETs

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TBL055N10THB 数据手册

N-Channel Enhancement Mode MOSFET

TBL055N10THB

Features



Low R_DS(on)& FOM

Extremely low switching loss

Excellent stability and uniformity

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: TO-263

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matted-Tin plated; Solderable Per MIL-STD-202, Method 208

TO-263

Ordering Information

Part Number

Package

TO-263

Shipping Quantity

Marking Code

TBL055N10THB

50 pcs / Tube & 800 pcs / Tape & Reel

055N10THB

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

V_DSS

Value

100

±20

120

126

Unit

Gate-to-Source Voltage

V_GSS

Continuous Drain Current (T_C= 25°C ) ^*5

Continuous Drain Current(T_C= 25°C, silicon limited)

Continuous Drain Current (T_C= 100°C ) ^*5

Pulsed Drain Current ^*3

I_D

I_DM

580

Single Pulse Avalanche Energy ^{*3, 6}

E_AS

Thermal Characteristics

Parameter

Power Dissipation (T_C= 25°C) ^*2

Symbol

P_D

Value

102

Unit

Thermal Resistance Junction-to-Air ^{*1, 4}

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

R_θJA

R_θJC

T_J

°C /W

°C

0.75

-55 ~ +150

T_STG

°C

MTM0902A: July 2022

www.gmesemi.com

12 3 4 5

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