Datasheet > TBL065N08THD

TBL065N08THD

更新时间： 2024-04-09 19:01:20

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	536K
描述
112A, 80V, 142W, N Channel, Power MOSFETs

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中文翻译

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数据手册

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TBL065N08THD 数据手册

N-Channel Enhancement Mode MOSFET

TBL065N08THD

Features



Extremely low on-resistance R_DS(ON)

Excellent gate charge x R_DS(on)product(FOM)

Uses advanced SGT technology

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

TO-252

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TBL065N08THD

TO-252

80 pcs / Tube & 2500 pcs / Tape & Reel

065N08THD

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

I_D

±20

112

Gate-to-Source Voltage

Continuous Drain Current (T_C= 25°C , Silicon limit)

Continuous Drain Current (T_C= 100°C Silicon limit)

Pulsed Drain Current (T = 25°C, t limited by T

I_D

)

_Jmax.

I_DM

E_AS

440

552

Single Pulse Avalanche Energy(L = 10mH, R_G= 25 Ω)

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C)

P_D

R_θJC

T_J

142

Thermal Resistance Junction-to-Case

Operating Junction Temperature Range

Storage Temperature Range

0.88

°C /W

-55 ~ +150

°C

T_STG

MTM0701A: June 2023 [1.0]

www.gmesemi.com

12 3 4 5

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