Datasheet > TBL072P03D

TBL072P03D

更新时间： 2024-04-09 19:01:44

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	469K
描述
60A, 30V, 90W, P Channel, Power MOSFETs

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TBL072P03D 数据手册

P-Channel Enhancement Mode MOSFET

TBL072P03D

Features



Load switching MOSFET for SMPS

Green device available

Very low on-resistance R_DS(ON)

Advanced high cell density trench technology

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanical Data



Case: TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

TO-252

Ordering Information

Part Number

Package

TO-252

Shipping Quantity

Marking Code

TBL072P03D

80 pcs / Tube or 2500 pcs / Tape & Reel

072P03D

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Drain-to-Source Voltage

Symbol

Value

Unit

V_DSS

V_GSS

-30

±20

-60

-40

-240

Gate-to-Source Voltage

Continuous Drain Current (V_GS=10V, T_C= 25°C )

Continuous Drain Current (V_GS=10V, T_C= 100°C)

Pulsed Drain Current ^*1

I_D

I_DM

Single Pulse Avalanche Energy ^*2

E_AS

Thermal Characteristics

Parameter

Symbol

Value

Unit

Power Dissipation (T_C= 25°C) ^*3

Thermal Resistance Junction-to-Case ^*3

Operating Junction Temperature Range

Storage Temperature Range

P_D

R_θJC

T_J

°C /W

°C

1.4

-55 ~ +150

T_STG

°C

MTM0688A: June 2020

www.gmesemi.com

12 3 4 5

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