Silicon Bridge Rectifiers
TB2S-G Thru. TB10S-G
Reverse Voltage: 200 to 1000 Volts
Forward Current: 0.8,1.0 A
RoHS Device
Features
TBS
-Glass passivated chip junction.
0.028 (0.70)
0.024 (0.60)
-High surge overload rating :30A peak
-Save space on printed circuit boards.
+
-
0.179 (4.55)
0.167 (4.25)
-High temperature soldering guaranteed:
260°C/10 seconds at 5 ibs.
0.012 (0.30)
0.008 (0.20)
-Pb free product.
0.264 (6.70)
0.249 (6.30)
0.161 (4.10)
0.154 (3.90)
-Plastic materrial has U/L flammability classification 94v-0.
0.006 (0.15)
0.002 (0.05)
Mechanical data
0.205 (5.20)
0.189 (4.80)
0.060 (1.45)
0.051 (1.15)
-Polarity: Symbol molded on body.
-Case: Molded plastic body over passivated junction.
-Terminals: Plated leads solderable per MIL-STD-750,
Method 2026.
0.028 (0.70)
0.024 (0.60)
Dimensions in inches and (millimeter)
-Mounting position: Any.
Maximum ratings and electrical characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
Marking
TB2S-G
TB2S
200
TB4S-G
TB4S
400
TB6S-G
TB6S
600
TB8S-G
TB8S
800
TB10S-G
TB10S
1000
Parameter
Unit
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
140
200
280
400
420
600
560
800
700
V
V
1000
Maximum DC Blocking Voltage
0.81)
1.02)
Maximum Average Forward Output Current
TL=100°C
IF(AV)
IFSM
A
A
Peak Forward Surge Current, 8.3ms Single
Half Sine-wave, Superimposed on Rated Load
(JEDEC Method)
30
Maximum Instantaneous Forward Voltage
at 0.4A DC
VF
IR
0.95
10
V
Maximum Reverse Current @TA=25°C
at Rated DC Blocking Voltage
μA
Typical Thermal Junction to lead
On aluminum substrate
On glass-epoxy substrate
RθJL
RθJA
25
62.5
80
°C/W
TJ
-55 to +150
-55 to +150
°C
°C
Operating Junction Temperature Range
Storage Temperature Range
TSTG
Notes: 1. On glass epoxy P.C.B
2. On aluminum substrate
REV:A
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QW-BBR53
Comchip Technology CO., LTD.