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TB2S

更新时间: 2024-09-15 07:17:55
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上华 - COMCHIP /
页数 文件大小 规格书
4页 96K
描述
Silicon Bridge Rectifiers

TB2S 数据手册

 浏览型号TB2S的Datasheet PDF文件第2页浏览型号TB2S的Datasheet PDF文件第3页浏览型号TB2S的Datasheet PDF文件第4页 
Silicon Bridge Rectifiers  
TB2S-G Thru. TB10S-G  
Reverse Voltage: 200 to 1000 Volts  
Forward Current: 0.8,1.0 A  
RoHS Device  
Features  
TBS  
-Glass passivated chip junction.  
0.028 (0.70)  
0.024 (0.60)  
-High surge overload rating :30A peak  
-Save space on printed circuit boards.  
+
-
0.179 (4.55)  
0.167 (4.25)  
-High temperature soldering guaranteed:  
260°C/10 seconds at 5 ibs.  
0.012 (0.30)  
0.008 (0.20)  
-Pb free product.  
0.264 (6.70)  
0.249 (6.30)  
0.161 (4.10)  
0.154 (3.90)  
-Plastic materrial has U/L flammability classification 94v-0.  
0.006 (0.15)  
0.002 (0.05)  
Mechanical data  
0.205 (5.20)  
0.189 (4.80)  
0.060 (1.45)  
0.051 (1.15)  
-Polarity: Symbol molded on body.  
-Case: Molded plastic body over passivated junction.  
-Terminals: Plated leads solderable per MIL-STD-750,  
Method 2026.  
0.028 (0.70)  
0.024 (0.60)  
Dimensions in inches and (millimeter)  
-Mounting position: Any.  
Maximum ratings and electrical characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Symbol  
Marking  
TB2S-G  
TB2S  
200  
TB4S-G  
TB4S  
400  
TB6S-G  
TB6S  
600  
TB8S-G  
TB8S  
800  
TB10S-G  
TB10S  
1000  
Parameter  
Unit  
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
140  
200  
280  
400  
420  
600  
560  
800  
700  
V
V
1000  
Maximum DC Blocking Voltage  
0.81)  
1.02)  
Maximum Average Forward Output Current  
TL=100°C  
IF(AV)  
IFSM  
A
A
Peak Forward Surge Current, 8.3ms Single  
Half Sine-wave, Superimposed on Rated Load  
(JEDEC Method)  
30  
Maximum Instantaneous Forward Voltage  
at 0.4A DC  
VF  
IR  
0.95  
10  
V
Maximum Reverse Current @TA=25°C  
at Rated DC Blocking Voltage  
μA  
Typical Thermal Junction to lead  
On aluminum substrate  
On glass-epoxy substrate  
RθJL  
RθJA  
25  
62.5  
80  
°C/W  
TJ  
-55 to +150  
-55 to +150  
°C  
°C  
Operating Junction Temperature Range  
Storage Temperature Range  
TSTG  
Notes: 1. On glass epoxy P.C.B  
2. On aluminum substrate  
REV:A  
Page 1  
QW-BBR53  
Comchip Technology CO., LTD.  

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