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T598F13TKL PDF预览

T598F13TKL

更新时间: 2024-11-14 03:06:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
5页 102K
描述
Silicon Controlled Rectifier, 1500A I(T)RMS, 960000mA I(T), 1300V V(DRM), 1300V V(RRM), 1 Element,

T598F13TKL 数据手册

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Technische Information / Technical Information  
Schneller Thyristor  
F
Fast Thyristor  
T 598 F 12 ... 13  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
Tvj = - 40°C...Tvj max  
Tvj = - 40°C...Tvj max  
Tvj = + 25°C...Tvj max  
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung  
repetitive peak forward off-state and reverse voltages  
VDRM , VRRM  
1200  
1300  
V
V
Vorwärts-Stoßspitzensperrspannung  
VDSM  
1200  
1300  
V
V
non-repetitive peak foward off-state voltage  
Rückwärts-Stoßspitzensperrspannung  
non-repetitive peak reverse voltage  
VRSM  
1300  
1400  
V
V
Durchlaßstrom-Grenzeffektivwert  
RMSM on-state current  
ITRSMSM  
1500  
A
TC = 85 °C  
TC = 47 °C  
Dauergrenzstrom  
ITAVM  
598  
960  
A
A
average on-state current  
Tvj = 25°C, tp = 10 ms  
Tvj = Tvj max, tp = 10 ms  
Stoßstrom-Grenzwert  
surge current  
ITSM  
11.300  
10.000  
A
A
A²s*103  
A²s*103  
Tvj = 25°C, tp = 10ms  
Tvj = Tvj max, tp = 10ms  
Grenzlastintegral  
I²t-value  
I²t  
638  
500  
Kritische Stromsteilheit  
DIN IEC 747-6  
f=50 Hz, iGM = 1 A  
diG/dt = 1 A/µs  
(diT/dt)cr  
200  
A/µs  
critical rate of rise of on-state current  
Tvj = Tvj max, vD = 0,67 VDRM  
Kritische Spannungssteilheit  
(dvD/dt)cr  
1)  
50  
2)  
critical rate of rise of off-state voltage  
5. Kennbuchstabe / 5th letter B  
5. Kennbuchstabe / 5th letter C  
5. Kennbuchstabe / 5th letter L  
5. Kennbuchstabe / 5th letter M  
50  
V/µs  
500  
500  
1000  
500 V/µs  
50 V/µs  
500 V/µs  
Charakteristische Werte / Characteristic values  
Tvj = Tvj max, iT = 1000 A  
Durchlaßspannung  
on-state voltage  
vT  
max. 1,66  
1,15  
V
Tvj = Tvj max  
Schleusenspannung  
threshold voltage  
VT(TO)  
V
mW  
Tvj = Tvj max  
Ersatzwiderstand  
slope resistance  
rT  
0,42  
Tvj = 25°C, vD =12 V  
Tvj = 25°C, vD = 12V  
Zündstrom  
IGT  
VGT  
IGD  
VGD  
IH  
max. 250  
max. 2,2  
mA  
V
gate trigger current  
Zündspannung  
gate trigger voltage  
Tvj = Tvj max, vD = 12 V  
Nicht zündener Steuerstrom  
gate non-trigger current  
max. 10  
max. 5  
mA  
mA  
Tvj = Tvj max,vD = 0,5 VDRM  
Tvj = Tvj max,vD = 0,5 VDRM  
Nicht zündene Steuerspannung  
gate non-trigger voltage  
max. 0,25  
max. 250  
max. 1000  
V
Tvj = 25°C, vD = 12 V, RA = 10 W  
Haltestrom  
mA  
mA  
holding current  
Tvj = 25°C, vD = 12 V, RGK>= 10 W  
iGM = 1 A, diG/dt = 1 A/µs  
tg = 20 µs  
Einraststrom  
IL  
latching current  
Tvj = Tvj max  
Vorwärts- und Rückwärts-Sperrstrom  
forward off-state and reverse currents  
iD, iR  
max. 100  
max. 1,5  
mA  
µs  
vD = VDRM, vR = VRRM  
Zündverzug  
DIN IEC 747-6  
tgd  
Tvj = 25°C  
gate controlled delay time  
iGM = 1 A, diG/dt = 1 A/µs  
1) Werte nach DIN IEC 747-6 (ohne vorausgehende Kommutierung). / Values to DIN IEC 747-6 (without prior commutation).  
2) Unmittelbar nach der Freiwerdezeit, vgl. Meßbedingungen für tq ./ Immediately after circuit commutated turn-off-time,  
see parameters tq.  
SZ-M / 12.10.98 , K.-A. Rüther  
A 117 / 98  
Seite/page 1  

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