Datasheet > T1971N44TOH

T1971N44TOH

更新时间： 2024-09-20 06:39:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	273K
描述
Silicon Controlled Rectifier, 3700A I(T)RMS, 4400V V(DRM), 4400V V(RRM), 1 Element,

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T1971N44TOH 数据手册

Datenblatt / Data sheet

Netz-Thyristor

Phase Control Thyristor

T 1971N

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / Maximum rated values

3800

4200

4000 V

4400 V

T_vj= -40°C... T_{vj max}

V_DRM,V_RRM

^PerK^iode^isn^cn^heda^Vt^oe^rwn^{ärts- und Rückwärts-Spitzensperrspannung}

^{repetitive peak forward off-state and re}E^verl^se^{e v}k^oltt^agr^eische Eigenschaften

3700 A

Durchlaßstrom-Grenzeffektivwert

maximum RMS on-state current

I_TRMSM

1730 A

2360 A

Dauergrenzstrom

average on-state current

T_C= 85 °C

T_C= 60 °C

I_TAVM

40000 A

36000 A

Stoßstrom-Grenzwert

surge current

T_vj= 25 °C, t_P= 10 ms

T_vj= T_{vj max}, t_P= 10 ms

I_TSM

8000 10³ A²s

6480 10³ A²s

Grenzlastintegral

I²t-value

T_vj= 25 °C, t_P= 10 ms

T_vj= T_{vj max}, t_P= 10 ms

I²t

DIN IEC 60747-6

f = 50 Hz, i_GM= 3 A, di_G/dt = 6 A/µs

300 A/µs

Kritische Stromsteilheit

critical rate of rise of on-state current

(di_T/dt)_cr

(dv_D/dt)_cr

2000 V/µs

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

T_vj= T_{vj max}, v_D= 0,67 V_DRM

5.Kennbuchstabe / 5^thletter H

Charakteristische Werte / Characteristic values

Durchlaßspannung

on-state voltage

typ.

max.

1,7 V

1,95 V

T_vj= T_{vj max}, i_T= 2000A

v_T

typ.

max.

1,1 V

1,29 V

Schleusenspannung

threshold voltage

T_vj= T_{vj max}

V_(TO)

typ.

max.

0,3 mΩ

0,33 mΩ

Ersatzwiderstand

slope resistance

T_vj= T_{vj max}

r_T

typ.

-0,0105

0,000182

0,13062

0,008028

-0,0266

0,00025

0,1662

Durchlaßkennlinie

on-state characteristic

200A ≤ i_F≤ 2500A

T_vj= T_{vj max}

max.

v_T= A + B ⋅ i_T+ C ⋅ Ln(i_T+ 1) + D ⋅ i_T

0,005006

350

Zündstrom

gate trigger current

T_vj= 25°C, v_D= 12 V

I_GT

V_GT

I_GD

V_GD

I_H

max.

2,5

Zündspannung

gate trigger voltage

Nicht zündender Steuerstrom

gate non-trigger current

T_vj= T_{vj max}, v_D= 12 V

T_vj= T_{vj max}, v_D= 0,5 V_DRM

max.

20 mA

10 mA

Nicht zündende Steuerspannung

gate non-trigger voltage

T_vj= T_{vj max}, v_D= 0,5 V_DRM

max.

0,4 V

350 mA

3 A

Haltestrom

holding current

T_vj= 25°C, v_D= 12 V

Einraststrom

latching current

T_vj= 25°C, v_D= 12 V, R_GK≥ 10 Ω

i_GM= 3 A, di_G/dt = 6 A/µs, t_g= 20 µs

I_L

Vorwärts- und Rückwärts-Sperrstrom

forward off-state and reverse current

T_vj= T_{vj max}

v_D= V_DRM, v_R= V_RRM

i_D, i_R

400 mA

2 µs

Zündverzug

DIN IEC 60747-6

t_gd

gate controlled delay time

T_vj= 25 °C,i_GM= 3 A, di_G/dt = 6 A/µs

C. Schneider

date of publication: 2006-05-05

revision:

prepared by:

approved by: J. Przybilla

BIP AM / SM PB, 2001-04-06, Przybilla J. / Keller

Seite/page

1/9

12 3 4 5 6 7...9

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与T1971N44TOH相关器件

型号	品牌	获取价格	描述	数据表
T197A106J025AS	VISHAY	获取价格	CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 25V, 10uF, THROUGH HOLE MOUNT, AXIAL LEADED
T197A106J050AS	VISHAY	获取价格	CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 50V, 10uF, THROUGH HOLE MOUNT, AXIAL LEADED
T197A106J060AS	VISHAY	获取价格	CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 60V, 10uF, THROUGH HOLE MOUNT, AXIAL LEADED
T197A106K025AS	VISHAY	获取价格	CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 25V, 10uF, THROUGH HOLE MOUNT, AXIAL LEADED
T197A106K050AS	VISHAY	获取价格	CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 50V, 10uF, THROUGH HOLE MOUNT, AXIAL LEADED
T197A106K060AS	VISHAY	获取价格	CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 60V, 10uF, THROUGH HOLE MOUNT, AXIAL LEADED
T197A106M025AS	VISHAY	获取价格	CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 25V, 10uF, THROUGH HOLE MOUNT, AXIAL LEADED
T197A106M050AS	VISHAY	获取价格	CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 50V, 10uF, THROUGH HOLE MOUNT, AXIAL LEADED
T197A106M060AS	VISHAY	获取价格	CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 60V, 10uF, THROUGH HOLE MOUNT, AXIAL LEADED
T197A156J015AS	VISHAY	获取价格	CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 15V, 15uF, THROUGH HOLE MOUNT, AXIAL LEADED

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